Zobrazeno 1 - 10
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pro vyhledávání: '"Frederick W. Clarke"'
Autor:
Frederick W. Clarke
Publikováno v:
Journal of Electronic Materials. 26:593-599
Effective mass ratios, m*, of electrons in n-type InSb, GaAs, and near intrinsic and n-type Hg1−xCdxTe for 0.20 < × < 0.30 over the temperature range 77K < T < 296K were measured using Faraday rotation spectroscopy. m* ranged from 0.0186 to 0.0357
Autor:
Frederick W. Clarke
Publikováno v:
Journal of Applied Physics. 75:4319-4326
A method for nondestructive determination of free‐electron concentration and mobility using Faraday rotation and absorption at mid‐infrared wavelengths is presented. Faraday rotation measurements were made at four CO2 laser wavelengths between 9
Autor:
Frederick W. Clarke, James C. M. Hwang, M. Asif Khan, Amir M. Dabiran, Oleg Laboutin, Peter Chow, Roger E. Welser, Ashok K. Sood, Steven K. Brierley, Jie Deng, Yash R. Puri
Publikováno v:
SPIE Proceedings.
GaN / Al 1-x Ga x N-based hetero-structures have demonstrated a versatility in RF electronic applications which is practically unmatched by any other material system. There are many device structures under consideration for use in RF and Power amplif
Autor:
R. Singh, Ashok K. Sood, Roger E. Wesler, Yash R. Puri, Paul M. Deluca, Jie Deng, Oleg Laboutin, James C. M. Hwang, Frederick W. Clarke
Publikováno v:
SPIE Proceedings.
GaN /AlGaN transistors are being developed for a variety of RF electronic devices that will eventually replace GaAs- and silicon-based devices for commercial and military applications. In this paper, we present results from the optimization of the gr
Autor:
Ashok K. Sood, Frederick W. Clarke, Yash R. Puri, James C. M. Hwang, Amir M. Dabiran, Jie Deng, R. Singh, Peter Chow
Publikováno v:
MRS Proceedings. 892
GaN /AlGaN transistors are being developed for a variety of RF electronic and high temperature electronics applications that will replace GaAs and Silicon based devices and amplifiers for commercial and military applications. In this paper, we presen
Publikováno v:
Infrared Detector Materials and Devices.
Effective mass ratios, m*, of electrons in near intrinsic and n-type Hg 1-x Cd x Te for 0.20 x 0.30 over the temperature range 77 K T 296 K were measured using Faraday rotation spectroscopy. Effective masses were found to be about twice as large at r
Autor:
Peter Chow, A. Souzis, Thomas Anderson, Yash R. Puri, James C. M. Hwang, Frederick W. Clarke, Ashok K. Sood, Ilya Zwieback, Amir M. Dabiran, Elwood J. Egerton, A. Gupta
Publikováno v:
SPIE Proceedings.
GaN /AlGaN transistors are being developed for a variety of RF electronic and high temperature elctronics applications that will replace GaAs and Silicon devices and circuits for commercial and military applications. AlGaN/ GaN based HEMT device stru
Autor:
Frederick W. Clarke, Fat D. Ho, Michael Shur, Shreepad Karmalkar, M. Asif Khan, J. Deng, J. W. Yang, Grigory Simin, Remis Gaska
Publikováno v:
Scopus-Elsevier
Gate current plays an important role in determining the characteristics and limiting performance of GaN-based field effect transistors. In GaN-based HFETs, the gate current limits the gate voltage swing and, hence, the maximum device current. Since t
Autor:
Frederick W. Clarke
Publikováno v:
Specification, Production, and Testing of Optical Components and Systems.
An optical method for measuring carrier concentration and mobility in n-type semiconductors is presented. The method depends on an accurate knowledge of the free electron effective mass,(M), as a function of temperature and dopant concentration. Thes
Autor:
Frederick W. Clarke
Publikováno v:
SPIE Proceedings.
A nondestructive characterization technique to determine free carrier concentration and mobility that is applicable to most n-type semiconductors, including infrared detector materials such as InSb and HgCdTe, is presented. The technique utilizes abs