Zobrazeno 1 - 10
of 112
pro vyhledávání: '"Frederick T. Chen"'
Autor:
Shyh Shyuan Sheu, Frederick T. Chen, Chih He Lin, Hsiu Chuan Shih, Ching-Yi Chen, Pi-Feng Chiu, Cheng-Wen Wu
Publikováno v:
IEEE Transactions on Computers. 64:180-190
The Resistive Random Access Memory (RRAM) is a new type of non-volatile memory based on the resistive memory device. Researchers are currently moving from resistive device development to memory circuit design and implementation, hoping to fabricate m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d70e228066a248eecf0d8118e5d1dcc2
https://doi.org/10.1109/tc.2014.12
https://doi.org/10.1109/tc.2014.12
Autor:
Frederick T. Chen
Publikováno v:
Solid-State Electronics. 103:59-63
Resistance-switching devices such as resistive random access memories (RRAMs) exhibit the ability to rapidly reduce resistance upon exceeding a threshold voltage, as part of the SET operation. For oxide-based RRAMs, the progressive generation of defe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ede406af1d7f9267dd655b09fec4dbd7
https://doi.org/10.1016/j.sse.2014.10.001
https://doi.org/10.1016/j.sse.2014.10.001
Autor:
Ming-Jer Kao, Meng-Fan Chang, Che-Ju Yeh, Pei-Ling Tseng, Shyh-Shyuan Sheu, Chia-Chen Kuo, Li-Yue Huang, Ming-Jinn Tsai, Yu-Sheng Chen, Ting-Chin Yang, Frederick T. Chen, Tzu-Kun Ku, Tun-Fei Chien, Shu-Meng Yang
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 62:80-84
Memristor devices are promising as high-density computing logic for non-high-speed normally off applications using heterogeneous technologies. This brief proposes a set-triggered-parallel-reset memristor logic (STPR-ML)-based on back-end-of-line-base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1066c5b48dab7667e42b90b4e8b97bc4
https://doi.org/10.1109/tcsii.2014.2362713
https://doi.org/10.1109/tcsii.2014.2362713
Autor:
Shyh-Shyuan Sheu, Ming-Jinn Tsai, Yue-Der Chih, Jui-Jen Wu, Ya-Chin King, Meng-Fan Chang, Frederick T. Chen, Chia-Chen Kuo, Tzu-Kun Ku, Chorng-Jung Lin
Publikováno v:
IEEE Journal of Solid-State Circuits. 49:908-916
The design of resistive RAM (ReRAM) faces two major challenges: 1) cell area versus write current requirements and 2) cell read current (ICELL) versus read disturbance. This paper proposes ReRAM macros using logic-process-based vertical parasitic-BJT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a758ca387158944e350cf67886ce0f7
https://doi.org/10.1109/jssc.2013.2297417
https://doi.org/10.1109/jssc.2013.2297417
Autor:
Kan-Hsueh Tsai, Pang-Shiu Chen, Frederick T. Chen, Ming-Jinn Tsai, Tai-Yuan Wu, Heng-Yuan Lee, Yu-Sheng Chen
Publikováno v:
Solid-State Electronics. 94:1-5
A 1-nm-thick AlO x layer is adopted to successfully eliminate soft-errors and reduce the operation current in HfO x based unipolar resistive random access memory (RRAM) with Ni as top electrode. Ni/HfO x /TiN RRAMs with one transistor–one resistor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f95c1eeea78ac099a3fd3b8748ad36b0
https://doi.org/10.1016/j.sse.2014.01.003
https://doi.org/10.1016/j.sse.2014.01.003
Autor:
Chun Chih Kuo, Horng-Chih Lin, Kow-Ming Chang, Ming Jinn Tsai, Wen Hsien Tzeng, Frederick T. Chen, Kou-Chen Liu, Yi Chun Chan, Chia Wen Zhong, Pang-Shiu Chen, Heng Yuan Lee
Publikováno v:
Surface and Coatings Technology. 231:563-566
In this study, the influence of indium tin oxide (ITO) top electrodes with different oxygen contents on the resistive switching characteristics of HfO x /TiN capacitor structure is investigated. Switching parameters, including set and reset voltage v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8657ed921c41cfaf7f3a9cf8c3534482
https://doi.org/10.1016/j.surfcoat.2012.07.039
https://doi.org/10.1016/j.surfcoat.2012.07.039
Autor:
Wei-Su Chen, Frederick T. Chen, Chen-Han Tsai, Pang-Shiu Chen, Heng-Yuan Lee, Tai-Yuan Wu, Yu-Sheng Chen, Pei-Yi Gu, Ming-Jinn Tsai, Kan-Hsueh Tsai
Publikováno v:
Microelectronic Engineering. 105:40-45
A highly scaling feasibility of resistance memory with a via-hole structure including Ti/HfO"x is demonstrated in this work. An empirical model is used to predict the correlation between the forming voltage of 5nm-thick HfO"x devices with concave con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7ad81c039407f160326407d1330af24
https://doi.org/10.1016/j.mee.2012.12.012
https://doi.org/10.1016/j.mee.2012.12.012
Autor:
Wei-Su Chen, Chen-Han Tsai, Pang-Shiu Chen, Tai-Yuan Wu, Z.H. Lin, S. Z. Rahaman, Ming-Jinn Tsai, Kan-Hsueh Tsai, Shyh-Shyuan Sheu, Pei-Yi Gu, Frederick T. Chen, P.L. Tseng, Yu-Sheng Chen, Tzu-Kun Ku, H. Y. Lee, C.H. Lin, W.P. Lin
Publikováno v:
ECS Transactions. 52:39-44
Consumer gadgets make up the fastest growing market for electronic devices today. These products will rely more and more on embedded storage-type memory, which can store system and processing data without impacting standby power consumption. For embe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba4906dc3e3206b10caa6e2e0ae6f79b
https://doi.org/10.1149/05201.0039ecst
https://doi.org/10.1149/05201.0039ecst
Autor:
Chia-Chen Kuo, Chen-Hsin Lien, Heng-Yuan Lee, Ming-Jinn Tsai, Meng-Fan Chang, Shyh-Shyuan Sheu, Frederick T. Chen, Tzu-Kun Ku, Keng-Li Su, Yu-Sheng Chen, Yih-Shan Yang, Ku-Feng Lin, Ming-Jer Kao, Pi-Feng Chiu, Che-Wei Wu
Publikováno v:
IEEE Journal of Solid-State Circuits. 48:878-891
ReRAM is a promising next-generation nonvolatile memory (NVM) with fast write speed and low-power operation. However, ReRAM faces two major challenges in read operations: 1) low read yield due to wide resistance distribution and 2) the requirement of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b2a028d8b86979d82e61db8328ea160
https://doi.org/10.1109/jssc.2012.2230515
https://doi.org/10.1109/jssc.2012.2230515
Autor:
S. Z. Rahaman, Pan-Shiu Chen, Kan-Hsueh Tsai, Pei-Yi Gu, Yu-Sheng Chen, Heng-Yuan Lee, Frederick T. Chen, Tzu-Kun Ku, Po-Tsung Tu, Pei-Hua Wang, Ming-Jinn Tsai, Chien-Hua Hsu, Wei-Su Chen, Yu-De Lin
Publikováno v:
2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
Resistive switching memories (RRAM or ReRAM) based on transition metal oxides (TMOs) have been widely investigated as a future nonvolatile memory (NVM) candidate with encouraging potential to serve both embedded and standalone applications, due to it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf90d686df8190c9aa751b3ed233a8a8
https://doi.org/10.1109/vlsi-tsa.2016.7480495
https://doi.org/10.1109/vlsi-tsa.2016.7480495