Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Frederick Neumeyer"'
Autor:
Fred B. Mancoff, Monika Arora, Mark DeHerrera, Sumio Ikegawa, Han K. Lee, Subir Mukherjee, Goei Shimon, Jijun Sun, Iftekhar Rahman, Frederick Neumeyer, Hsuan-Yi Chou, Chin Hoe Tan, Amit Shah, Syed M. Alam, Kerry J. Nagel, Sanjeev Aggarwal
Publikováno v:
Spintronics XV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b2bda4a39e2197a1c39a7464f33a33d
https://doi.org/10.1117/12.2635022
https://doi.org/10.1117/12.2635022
Autor:
Dietmar Gogl, Greg Viot, Jieming Qi, Xiaohu Zhang, Frederick Neumeyer, William Meadows, Barkatullah Javed S, Tom Andre, Syed M. Alam, Mark F. Deherrera, Bryan Kang, Halbert S. Lin, Jason Allen Janesky, Yaojun Zhang, Forhad Hossain
Publikováno v:
2017 IEEE International Memory Workshop (IMW).
Magnetoresistive Random Access Memory (MRAM) technology was introduced into the market last decade in the form of Toggle MRAM, available in densities up to 16Mb. In the last few years, Spin-Torque MRAM, the next generation of Magnetic Tunnel Junction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6b468f7662274e52b0051c4dbb10423
https://doi.org/10.1109/imw.2017.7939104
https://doi.org/10.1109/imw.2017.7939104