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Autor:
Marie-Laure David, David P. Brunco, Brice De Jaeger, Luc Lajaunie, Jerome Mitard, Laurent Souriau, Mireia Bargallo Gonzalez, Eddy Simoen, Gijs Brouwers, Shawn G. Thomas, Frederick Leys, Marc Meuris, Nyles Cody, Geert Eneman, Rui Yang
Publikováno v:
physica status solidi c. 6:1912-1917
The electrical impact of threading dislocations in strained-germanium (s-Ge) grown on a strain-relaxed Si0.2Ge0.8 buffer is investigated by means of the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of p+n and n+p junctions fabr