Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Frederick Koch"'
Publikováno v:
AIP Conference Proceedings.
The photoluminescence of dilute nitride semiconductors shows a number of features that are not common for other semiconductors, even for compound semiconductors. We studied several MBE grown InGaAsN samples with a nitrogen content between 0.9 and 1.8
Publikováno v:
AIP Conference Proceedings.
It is shown that photogenerated electronic transport in heterostructures containing dilute nitride semiconductors takes place mainly in the interfacing material, having higher mobility and higher energy gap, in spite of the expected quick relaxation
Autor:
Marian Enachescu, Frederick Koch, Gerhard Krötz, Gerhard Müller, Rolf Jürgen Behm, Elmar Hartmann
Publikováno v:
Journal of Non-Crystalline Solids. :1067-1070
Samples fabricated of n-type, hydrogenated amorphous Si layers deposited on heavily doped, p-type crystalline Si substrates, forming a p-n heterojunction, were modified and imaged by use of a scanning tunneling microscope (STM). Applying a sufficient
Autor:
J. Frederick Koch
Publikováno v:
Advances in Solid State Physics ISBN: 9783528080211
After a quick sketch of activities in the area of dc conductivity studies on semiconductor surface space charge layers, the paper presents a comprehensive summary of the high frequency, dynamical studies. We discuss in succession microwave frequency
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53586ace6b6ec6a259ec688c86e2b7b4
https://doi.org/10.1007/bfb0107375
https://doi.org/10.1007/bfb0107375
Autor:
Wolfram Wersing, Bohuslav Rezek, E. Hartmann, Peter Radojkovic, Frederick Koch, Christian Erich Zybill, Michael Schwartzkopff, Rainer Bruchhaus, Hussein Boubekeur, Gerhard Groos
Publikováno v:
SPIE Proceedings.
Domain wall sin ferroelectric tetragonal poled PZT films have been observed by surface corrugation effects. Boundaries between adjacent 90 degree domains show a vertical shrinkage on the surface as result of coherency defects and shear strain at the
Publikováno v:
Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials.
Autor:
J. Frederick Koch
Publikováno v:
SPIE Proceedings.
Semiconductor structures are discussed in which the dopant impurities are arranged in an ordered or at least a partially regular manner. Various electronic properties of such arrays are examined, and it is shown how a layer of dopant atoms in silicon
Autor:
Frederick Koch, Jian-Qiang Lu
Publikováno v:
Japanese Journal of Applied Physics. 35:826
In studies of the degradation effect in advanced self-aligned bipolar transistors, we observe random telegraph noise (RTN). This phenomenon closely resembles that in metal-oxide-semiconductor field-effect transistors (MOSFETs), but the temperature an
Autor:
Mitsuaki A. Yoshida, Avery A. Sandberg, Kazuma Ohyashiki, Tin Han, Junko H. Ohyashiki, Frederick Koch
Publikováno v:
Cancer Genetics and Cytogenetics. 17:325-331
We encountered a 36-year-old white male patient with poorly differentiated lymphocytic lymphoma, whose lymph node cells showed a clonal cytogenetic change involving chromosome #14, i.e., 47,XY, + 2,der(14),t(14;14)(14pter----14q32;14q24----14q32++ +)