Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Frederick A. Kish"'
Publikováno v:
Scientific American. 284:62-67
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2150461e064eba64f7c4d1d3db432e60
https://doi.org/10.1038/scientificamerican0201-62
https://doi.org/10.1038/scientificamerican0201-62
Publikováno v:
Journal of Crystal Growth. 174:213-219
The recent introduction of a family of very high-efficiency transparent-substrate (TS) ( Al x Ga 1 −x ) 0.5 In 0.5 P GaP LEDs was made possible by the development of advanced compound semiconductor wafer bonding techniques, including techniques for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0805383f4c6c3b0db826e196352e560d
https://doi.org/10.1016/s0022-0248(96)01107-4
https://doi.org/10.1016/s0022-0248(96)01107-4
Autor:
S. J. Caracci, K. C. Hsieh, C. P. Kuo, A. R. Sugg, M. G. Craford, Frederick A. Kish, J. E. Baker, John Dallesasse, Nick Holonyak, Steven A Maranowski, T. D. Osentowski, Robert M Fletcher
Publikováno v:
Journal of Electronic Materials. 21:1133-1139
Data are presented demonstrating the formation of native oxides from high Al composition In0.5(AlxGa1-x)0.5P (x≳ 0.9) by simple annealing in a “wet” ambient. The oxidation occurs by reaction of the high Al composition crystal with H2O vapor (in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b12644482412598b43f77459c783475e
https://doi.org/10.1007/bf02667606
https://doi.org/10.1007/bf02667606
Publikováno v:
Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9639e66e336900454eb180d64ade6c1e
https://doi.org/10.1109/leosst.1994.700527
https://doi.org/10.1109/leosst.1994.700527
Publikováno v:
Electronics Letters. 30:1790-1792
Data are presented demonstrating the high luminous flux operation of large-area light-emitting diodes (LEDs) fabricated by semiconductor wafer bonding. These LEDs operating in the 600–615 nm region are shown to be capable of emitting luminous fluxe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7b9b36417dbe2d892f76675b77e608b
https://doi.org/10.1049/el:19941232
https://doi.org/10.1049/el:19941232
Autor:
Christopher H. Lowery, Serge L Rudaz, Richard Mann, Richard P. Schneider, Werner Goetz, Michael R. Krames, Eric Scott Johnson, Ying-Lan Chang, Lou W. Cook, T. Takeuchi, M. Heuschen, Ghulam Hasnain, Dan A. Steigerwald, Tun S. Tan, John F. Thompson, G. Christenson, Christophe P. Kocot, R Scott Kern, M. J. Ludowise, Paul S. Martin, William R. Imler, Nathan F. Gardner, J. O'Shea, M. Maranowski, Frederick A. Kish, David Paul Basile, Jeffrey N. Miller, Gerd O. Mueller, Regina Mueller-Mach, Jingxi Yu, D. Collins, S. Jeffrey Rosner, Steven D. Lester, Jonathan J. Wierer, Reena Khare, Robert M Fletcher, Alice Edwards, M. G. Craford, Kevin Killeen, Steven A Maranowski
Publikováno v:
SPIE Proceedings.
Currently, commercial LEDs based on AlGaInN emit light efficiently from the ultraviolet-blue to the green portion of the visible wavelength spectrum. Data are presented on AlGaInN LEDs grown by organometallic vapor phase epitaxy (OMVPE). Designs for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e1d37aed6e7815238dea53a3d891141
https://doi.org/10.1117/12.382822
https://doi.org/10.1117/12.382822
Publisher Summary This chapter discusses visible light-emitting diodes (LEDs). Visible LEDs have been available commercially since the 1960s. The early LEDs utilized the gallium arsenide phosphide (GaAsP) materials system. They were direct energy-gap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b5894fde20736dc777934d8dba8f2eb
https://doi.org/10.1016/s0080-8784(08)62487-4
https://doi.org/10.1016/s0080-8784(08)62487-4
Autor:
G.E. Hofler, Frank M. Steranka, Serge L Rudaz, A. J. Moll, S. A. Stockman, M. J. Ludowise, Jingxi Yu, J. Tarn, Steven A. Maranowski, Tim Osentowski, Lou W. Cook, Virginia M. Robbins, Dennis C Defevere, C. P. Kuo, Changhua Chen, M. G. Craford, M. J. Peanasky, Dan A. Steigerwald, Robert M Fletcher, K. G. Park, I. H. Tan, Frederick A. Kish, Michael D. Camras
Publikováno v:
Light-Emitting Diodes: Research, Manufacturing, and Applications.
A new class of LEDs based on the AlGaInP material system first became commercially available in the early 1990's. These devices benefit from a direct bandgap from the red to the yellow-green portion of the spectrum. The high efficiencies possible in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16dc2c200b6c7ab3e563974a8dfc5941
https://doi.org/10.1117/12.271032
https://doi.org/10.1117/12.271032
Autor:
T. S. Tan, Nathan F. Gardner, D. Collins, Frederick A. Kish, C. Carter-Coman, G. Sasser, B. Loh, G.E. Hofler, J. Posselt, Michael R. Krames
Publikováno v:
Electronics Letters. 34:1781
Data are presented demonstrating red-orange-yellow spectrum (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/GaP high-power light-emitting diode (LED) lamps which emit 10-20 lm of flux while simultaneously maintaining luminous efficiencies of /spl ges/20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfd718cff2e7d6322d6e22760812dd97
https://doi.org/10.1049/el:19981217
https://doi.org/10.1049/el:19981217
Autor:
D. A. Vanderwater, G.E. Hofler, Frederick A. Kish, Frank M. Steranka, Dennis C Defevere, K. G. Park, Daniel A. Steigerwald
Publikováno v:
Electronics Letters. 32:132
Semiconductor wafer bonding is employed to fabricate very high efficiency transparent-substrate (TS) AlGaInP light-emitting diodes (LEDs) with projected lifetimes in excess of 100000 h under accelerated life test at an ambient temperature of 55/spl d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16c7f62bb496755548e4abdfaa4f2f63
https://doi.org/10.1049/el:19960098
https://doi.org/10.1049/el:19960098