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Autor:
Gregoire Ducotey, Olivier Robin, Sebastien Gaillard, Damien Jeanjean, Rurh Sramek, Yufei Chen, Brian J. Brown, Frederic Pitard, Laurent Nicoud, Sébastien Mermoz
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
A high yield copper damascene process requires defect-free copper surfaces after Cu CMP. In this paper we present a novel technique to improve cleaning efficiency, especially the removal of particles in the range of 20 to 80nm. This innovative Chemic