Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Frederic Lazzarino"'
Autor:
Shreya Kundu, Stefan Decoster, Philippe Bezard, Ankit Nalin Mehta, Harold Dekkers, Frederic Lazzarino
Publikováno v:
ACS Applied Materials & Interfaces. 14:34029-34039
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d4faadbb8ecd777088a6f45f8f4e132
https://doi.org/10.1021/acsami.2c07514
https://doi.org/10.1021/acsami.2c07514
Publikováno v:
Japanese Journal of Applied Physics. 62:SI1004
Numerical data of two in situ optical acquisition systems were used in machine learning algorithm to evaluate an shallow trench isolation dry etch process in a dataset of more than 200 etched wafers processed during a year. Though overall recipe perf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7715d586562130fa8040c380eaef4a4
https://doi.org/10.35848/1347-4065/acbbd6
https://doi.org/10.35848/1347-4065/acbbd6
Autor:
S. Paolillo, Guillaume Boccardi, N. Jourdan, Manoj Jaysankar, Zheng Tao, Sylvain Baudot, Geert Mannaert, Juergen Boemmels, T. Hopf, E. Capogreco, Shouhua Wang, Efrain Altamirano, E. Dupuy, Olalla Varela Pedreira, B. Briggs, Thomas Chiarella, Joris Cousserier, Sofie Mertens, Romain Ritzenthaler, Frank Holsteyns, C. Lorant, Goutham Arutchelvan, Ingrid Demonie, Steven Demuynck, K. Kenis, Xiuju Zhou, Anshul Gupta, F. Sebai, D. Radisic, Zsolt Tokei, Erik Rosseel, A. Sepulveda, Naoto Horiguchi, Christel Drijbooms, Antony Premkumar Peter, Haroen Debruyn, Nouredine Rassoul, Bilal Chehab, P. Morin, Boon Teik Chan, Christopher J. Wilson, Katia Devriendt, Noemie Bontemps, Frederic Lazzarino, Paola Favia, Lieve Teugels, D. Yakimets, F. Schleicher, Houman Zahedmanesh, Jerome Mitard, Min-Soo Kim, An De Keersgieter, Sujith Subramanian, Kevin Vandersmissen, Hans Mertens, Eugenio Dentoni Litta, Yong Kong Siew
Publikováno v:
IEEE Transactions on Electron Devices. 67:5349-5354
Buried power rail (BPR) is a key scaling booster for CMOS extension beyond the 5-nm node. This work demonstrates, for the first time, the integration of tungsten (W) BPR lines with Si finFETs. BPR technology requires insertion of metal in the front-e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39c090ddf1ac756f7a1d162529a99308
https://doi.org/10.1109/ted.2020.3033510
https://doi.org/10.1109/ted.2020.3033510
Autor:
Prem Panneerchelvam, Ankur Agarwal, Chad M. Huard, Alessandro Vaglio Pret, Antonio Mani, Roel Gronheid, Marc Demand, Kaushik Kumar, Sara Paolillo, Frederic Lazzarino
Publikováno v:
Journal of Vacuum Science & Technology B. 40:062601
Quantitatively accurate, physics-based, computational modeling of etching and lithography processes is essential for modern semiconductor manufacturing. This paper presents lithography and etch models for a trilayer process in a back end of the line
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3de34cf34076288e2ffb986dcf6a3ade
https://doi.org/10.1116/6.0002059
https://doi.org/10.1116/6.0002059
Autor:
Zaid El-Mekki, F. Schleicher, Frederic Lazzarino, D. Trivkovic, Zsolt Tokei, B. De-Wachter, S. V. Gompel, L. Halipre, E. Vancoille, S. Decoster, G. Muroch, Thomas Witters, L. Dupas, O. Varela-Pereira, B. Briggs, Quoc Toan Le, Harinarayanan Puliyalil, Christopher J. Wilson, Philippe Leray, N. Jourdan, I. Demonie, C. Lorant, Joost Bekaert, Nancy Heylen, Y. Kimura, Rogier Baert, M. H. van der Veen, J. Versluijs, Miroslav Cupak, Patrick Verdonck, K. Croes, Manoj Jaysankar, Anne-Laure Charley, J. Heijlen, J. Uk-Lee, Ivan Ciofi, Y. Drissi, V. Vega-Gonzalez, S. Paolillo, H. Vats, D. Montero, L. Rynders, Els Kesters, M. Ercken, A. Lesniewska, R. Kim, Lieve Teugels, T. Webers
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
The integration of high-aspect-ratio (AR) supervias (SV) into a 3 nm node test vehicle, bypassing an intermediate 21 nm pitch layer, is demonstrated. Place-and-route (PnR) simulations of the Power Delivery Network (PDN) proved IR-drop reduction with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d5b5a73112c7be6f5016d4aa4c44eb7
https://doi.org/10.1109/iedm13553.2020.9372096
https://doi.org/10.1109/iedm13553.2020.9372096
Autor:
P. Morin, Julien Ryckaert, Doyoung Jang, Lieve Teugels, Efrain Altamirano-Sanchez, M. H. Na, Jürgen Bömmels, F. Schleicher, S. Wang, A. Sepúlveda, Serge Biesemans, C. Lorant, I. Demonie, Gayle Murdoch, E. Dentoni Litta, A. Lesniewska, Zsolt Tokei, Bilal Chehab, Farid Sebaai, Antony Premkumar Peter, N. Nagesh, Naoto Horiguchi, Frederic Lazzarino, Boon Teik Chan, Geert Hellings, O. Varela Pedreira, N. Jourdan, D. Radisic, O. Richard, Z. Tao, Hans Mertens, P. Marien, Anshul Gupta, Nancy Heylen, Steven Demuynck, Katia Devriendt
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
This paper reports BPR/Via-to-BPR (VBPR) module development at 24nm fin pitch (FP) / 42nm contacted gate pitch (CPP), and W and Ru-BPR and Ru- Contact-to-Active (M0A)/VBPR resistance (R) & electromigration (EM). BPR dielectric barrier, BPR plug barri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59e54b6d81ba91648fb02f7a002b2fd9
https://doi.org/10.1109/iedm13553.2020.9371970
https://doi.org/10.1109/iedm13553.2020.9371970
Autor:
Nancy Heylen, K. Croes, Rogier Baert, S. Park, Geoffrey Pourtois, Jean-Philippe Soulie, Katia Devriendt, Christopher J. Wilson, Ming Mao, Q-T. Le, V. Blanco, Gayle Murdoch, Herbert Struyf, Anshul Gupta, V. Vega, Lieve Teugels, S. Paolillo, N. Jourdan, Kiroubanand Sankaran, J. Sweerts, Ivan Ciofi, S. Decoster, P. Morin, Els Kesters, Juergen Boemmels, Frederic Lazzarino, Zs. Tokei, Christoph Adelmann, M. H. van der Veen, M. Ercken, Kris Vanstreels, S. Van Elshocht, M. O'Toole, J. Versluijs, M. H. Na, Frank Holsteyns, Houman Zahedmanesh
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Interconnect options will be introduced and reviewed targeting tight pitch metal layers at the local levels. Examples include hybrid metallization, semi-damascene interconnects as well as potential new conductor materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3b4b449b819b2556b63b50762bf16b9
https://doi.org/10.1109/iedm13553.2020.9371903
https://doi.org/10.1109/iedm13553.2020.9371903
Autor:
Danny Wan, Sebastien Couet, Xiaoyu Pao, Laurent Souriau, Diana Tsvetanova, Diziana Vangoidsenhoven, Arame Thiam, Antoine Pacco, Anton Potocnik, Massimo Mongillo, Tsvetan Ivanov, Julien Jussot, Jeroen Verjauw, Rohith Acharya, Jeroen Heijlen, GabrieleLuca Donadio, Bogdan Govoreanu, Frederic Lazzarino, Iuliana Radu
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63f5a4a499f5ea65fed2d1c8d159e992
https://doi.org/10.7567/ssdm.2020.i-4-03
https://doi.org/10.7567/ssdm.2020.i-4-03
Autor:
Anne-Laure Charley, Philippe Leray, Christophe Beral, Romuald Blanc, Amir-Hossein Tamaddon, Poulomi Das, Werner Gillijns, Ataklti Weldeslassie, Frederic Lazzarino
Publikováno v:
Extreme Ultraviolet Lithography 2020.
The key challenge to enable a good defectivity control for extreme ultraviolet (EUV) single expose at 32nm pitch is to understand what are the main drivers for defect generation. CD is one of the main contributors, and has many sources of variability
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc25e3c1a992019bbe13305998e66054
https://doi.org/10.1117/12.2572865
https://doi.org/10.1117/12.2572865
Autor:
Tao Zheng, Frederic Lazzarino, Efrain Altamirano-Sánchez, Zhang Liping, Boon Teik Chan, Emmanuel Dupuy
Publikováno v:
Advanced Etch Technology for Nanopatterning IX.
FinFETs have demonstrated significant performance improvement compared to planar devices, because of its superior short channel control and higher driving capability at a much smaller footprint. It has become the mainstream technology in CMOS industr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dc2a879288e4ae6c96d9494dcbdd14e
https://doi.org/10.1117/12.2552022
https://doi.org/10.1117/12.2552022