Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Frederic Huguennet"'
Autor:
Ana-Maria Armeanu, Isabelle Schanen, Frederic Huguennet, Michael Chomat, Ingo Bork, Peter Buck, Nacer Zine El Abidine, Frank Sundermann, Vincent Farys, Emek Yesilada
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS
Journal of Micro/Nanolithography, MEMS, and MOEMS, 2016, 15 (2), pp.021011
Journal of Micro/Nanolithography, MEMS, and MOEMS, Society of Photo-optical Instrumentation Engineers, 2016, 15 (2), pp.021011
Journal of Micro/Nanolithography, MEMS, and MOEMS, 2016, 15 (2), pp.021011
Journal of Micro/Nanolithography, MEMS, and MOEMS, Society of Photo-optical Instrumentation Engineers, 2016, 15 (2), pp.021011
In a previous work, we demonstrated that the current optical proximity correction model assuming the mask pattern to be analogous to the designed data is no longer valid. An extreme case of line-end shortening shows a gap up to 10 nm difference (at m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::018cf9ff84893eaec87fa0d733cc8a68
https://hal.science/hal-02025168
https://hal.science/hal-02025168
Autor:
Michael Chomat, Ingo Bork, Peter Buck, Frederic Huguennet, Vincent Farys, Isabelle Schanen, Ana-Maria Armeanu, Frank Sundermann, Nacer Zine El Abidine, Emek Yesilada
Publikováno v:
SPIE Proceedings.
In a previous work [1] we demonstrated that current OPC model assuming the mask pattern to be analogous to the designed data is no longer valid. Indeed as depicted in figure 1, an extreme case of line-end shortening shows a gap up to 10 nm difference
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e347b1cd4390344c59aa617663fd4c6
https://doi.org/10.1117/12.2203267
https://doi.org/10.1117/12.2203267
