Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Frederic Georgi"'
Autor:
Di Li, Vandad Rohani, Aravind Parakkulam Ramaswamy, Mohamed Sennour, Frederic Georgi, Laurent Fulcheri
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0632073db1547c01d2f35442ca0e3587
https://doi.org/10.2139/ssrn.4102505
https://doi.org/10.2139/ssrn.4102505
Autor:
Di Li, Vandad Rohani, Aravind Parakkulam Ramaswamy, Mohamed Sennour, Frederic Georgi, Paul Dupont, Laurent Fulcheri
Publikováno v:
Applied Catalysis A: General. 650:119015
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd409e27f6969cfe546e80f65f5bd3a4
https://doi.org/10.1016/j.apcata.2022.119015
https://doi.org/10.1016/j.apcata.2022.119015
Autor:
Caroline Elias, Maud Nemoz, Hélène Rotella, Frédéric Georgi, Stéphane Vézian, Maxime Hugues, Yvon Cordier
Publikováno v:
APL Materials, Vol 12, Iss 3, Pp 039901-039901-2 (2024)
Externí odkaz:
https://doaj.org/article/8ba34bf2abe346928daf0ca12f2063a2
Autor:
Caroline Elias, Maud Nemoz, Hélène Rotella, Frédéric Georgi, Stéphane Vézian, Maxime Hugues, Yvon Cordier
Publikováno v:
APL Materials, Vol 11, Iss 3, Pp 031105-031105-6 (2023)
Due to its large piezoelectric and spontaneous polarization coefficients combined with the possibility of being grown lattice-matched with GaN, wide bandgap ScAlN is becoming a promising material in III-nitride semiconductor technology. In this work,
Externí odkaz:
https://doaj.org/article/710ed96f7898462db701fb087b2b14c7