Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Freddy De Pestel"'
Autor:
A. Constant, Freddy De Pestel, H. Ziad, Joris Baele, Tomas Novak, Peter Coppens, Petr Kostelník
Publikováno v:
Materials Science in Semiconductor Processing. 137:106157
Polycrystalline AlN grown on Si3N4 by metal organic chemical vapor deposition is found to be wet etched by EKC265™ polymer strip solution, in which the active component is hydroxylamine (H3NO). The etch rate shows to be strongly dependent on surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62e10191688d31b3beda7b9b1d449e4a
https://doi.org/10.1016/j.mssp.2021.106157
https://doi.org/10.1016/j.mssp.2021.106157
Publikováno v:
Materials Science in Semiconductor Processing. 129:105806
In this work, the temperature dependence of the specific contact resistance in Au-free ohmic contacts formed on AlGaN/GaN heterostructures is studied for different barrier layer characteristics, i.e. thickness and surface roughness of the AlGaN layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cc86c5d4430ba65b2d8d80ceed9c17c
https://doi.org/10.1016/j.mssp.2021.105806
https://doi.org/10.1016/j.mssp.2021.105806
Autor:
E.V. Yakovlev, A.S. Segal, Roman Talalaev, Johan Meersman, Jelle Genne, Freddy De Pestel, H. Ziad, Gerhard Koops, Denis Bazarevskiy, Marnix Tack
Publikováno v:
Semiconductor Science and Technology. 34:024001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d066237d2be7943cb3963aed27e4a7d4
https://doi.org/10.1088/1361-6641/aaf4eb
https://doi.org/10.1088/1361-6641/aaf4eb
Autor:
Hal Massie, Nick Martens, Laurence Golonka, Jaume Roig, Eddy De Backer, Charles Hoggatt, Gordy Grivna, S. Mouhoubi, Tony Colpaert, Freddy De Pestel, Peter Coppens, Gary H. Loechelt, Filip Bauwens
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
A novel silicon device architecture for DC-DC power conversion is reported. Efficient switching at high frequencies (1–5 MHz) is achieved by simultaneously reducing gate charge, reverse capacitance, and gate resistance while still maintaining good
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fc3ca2a9c7c4a0568d8af95f0c8170f
https://doi.org/10.1109/ispsd.2012.6229029
https://doi.org/10.1109/ispsd.2012.6229029
Publikováno v:
ECS Meeting Abstracts. :1046-1046
During failure analysis on high voltage I3T50 products, it was found that irregular Nsinker regions were present in the top region of the wafer. This Nsinker distortion, also called POCl3 deformation, was shown during failure analysis to be linked to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b86614d5ef7658fc06ee2eb72c97688
https://doi.org/10.1149/ma2007-02/18/1046
https://doi.org/10.1149/ma2007-02/18/1046
Autor:
Alexander Segal, Eugene Yakovlev, Denis Bazarevskiy, Roman Talalaev, Hocine Ziad, Jelle Genne, Gerhard Koops, Johan Meersman, Freddy De Pestel, Marnix Tack
Publikováno v:
Semiconductor Science & Technology; Feb2019, Vol. 34 Issue 2, p1-1, 1p
Autor:
Loechelt, Gary, Grivna, Gordy, Golonka, Laurence, Hoggatt, Charles, Massie, Hal, De Pestel, Freddy, Martens, Nick, Mouhoubi, Samir, Roig, Jaume, Colpaert, Tony, Coppens, Peter, Bauwens, Filip, De Backer, Eddy
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices & ICs; 1/ 1/2012, p85-88, 4p
Publikováno v:
Proceedings of 35th European Solid-State Device Research Conference, 2005 (ESSDERC 2005); 2005, pI-XIII, 13p
Autor:
Mertens, P. W., McGeary, M. J., Schaekers, M., Sprey, H., Vermeire, B., Depas, M., Meuris, M., Heyns, M. M.
Publikováno v:
MRS Online Proceedings Library; 1997, Vol. 477 Issue 1, p89-100, 12p