Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Freddie Withers"'
Autor:
Maciej Da̧browski, Shi Guo, Mara Strungaru, Paul S. Keatley, Freddie Withers, Elton J. G. Santos, Robert J. Hicken
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
The use of light in driving the magnetization of materials has great technological potential, as well as allowing for insights into the fast dynamics of magnetic systems. Here, the authors combine CrI3, a van der Waals magnet, with WSe2, and demonstr
Externí odkaz:
https://doaj.org/article/e13a52313d0e454bb36483d13a317641
Autor:
Darren Nutting, Jorlandio F. Felix, Evan Tillotson, Dong-Wook Shin, Adolfo De Sanctis, Hong Chang, Nick Cole, Saverio Russo, Adam Woodgate, Ioannis Leontis, Henry A. Fernández, Monica F. Craciun, Sarah J. Haigh, Freddie Withers
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-10 (2020)
Low-cost, mass-scalable production routes which preserve the quality of the single crystals are required to up-scale van der Waals materials. Here, the authors demonstrate an approach to realise a variety of functional heterostructures based on van d
Externí odkaz:
https://doaj.org/article/37d34469109f414ba9c2bb89a80673a8
Autor:
Freddie Withers, Darren Nutting, Kristian Sommer Thygesen, Takashi Taniguchi, Janire Escolar, Alireza Taghizadeh, Kenji Watanabe, Namphung Peimyoo, Saverio Russo, Monica F. Craciun, Thorsten Deilmann
Publikováno v:
Peimyoo, N, Deilmann, T, Withers, F, Escolar, J, Nutting, D, Taniguchi, T, Watanabe, K, Taghizadeh, A, Craciun, M F, Thygesen, K S & Russo, S 2021, ' Electrical tuning of optically active interlayer excitons in bilayer MoS 2 ', Nature Nanotechnology, vol. 16, no. 8, pp. 888-893 . https://doi.org/10.1038/s41565-021-00916-1
Interlayer (IL) excitons, comprising electrons and holes residing in different layers of van der Waals bonded two-dimensional semiconductors, have opened new opportunities for room-temperature excitonic devices. So far, two-dimensional IL excitons ha
Autor:
Gabriela Augusta Prando, Marion E. Severijnen, Ingrid D. Barcelos, Uli Zeitler, Peter C. M. Christianen, Freddie Withers, Yara Galvão Gobato
Publikováno v:
Physical Review Applied, 16, 6, pp. 1-9
Physical Review Applied, 16, 1-9
Physical Review Applied, 16, 1-9
Contains fulltext : 244692.pdf (Publisher’s version ) (Open Access)
Autor:
Simon Baber, Ralph Nicholas Edward Malein, Prince Khatri, Paul Steven Keatley, Shi Guo, Freddie Withers, Andrew J. Ramsay, Isaac J. Luxmoore
We report optically detected magnetic resonance (ODMR) measurements of an ensemble of spin-1 negatively charged boron vacancies in hexagonal boron nitride. The photoluminescence decay rates are spin-dependent, with inter-system crossing rates of $1.0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::799dc007382818136b0167370bf4bd8c
http://arxiv.org/abs/2111.11770
http://arxiv.org/abs/2111.11770
Autor:
Shi Guo, Ingrid D. Barcelos, Peter C. M. Christianen, Uli Zeitler, Freddie Withers, Gabriela A. Prando, Yara Galvão Gobato, Marion Severijnen, Darren Nutting
Publikováno v:
Nanoscale, pp. 1-6
Nanoscale, 1-6
STARTPAGE=1;ENDPAGE=6;ISSN=2040-3364;TITLE=Nanoscale
Nanoscale, 1-6
STARTPAGE=1;ENDPAGE=6;ISSN=2040-3364;TITLE=Nanoscale
Advanced van der Waals (vdW) heterostructure devices rely on the incorporation of high quality dielectric materials which need to possess a low defect density as well as being atomically smooth and uniform. In this work we explore the use of talc die
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5719cd0ac80032c5846c96a91a4851c
Autor:
Monica F. Craciun, Janire Escolar, Namphung Peimyoo, Adolfo De Sanctis, Anders C. Riis-Jensen, Saverio Russo, Frank Vollmer, Hsin-Yu Wu, Freddie Withers, Gabi Prando, Kristian Sommer Thygesen
Publikováno v:
ACS applied materialsinterfaces. 12(49)
Tailoring of the band gap in semiconductors is essential for the development of novel devices. In standard semiconductors, this modulation is generally achieved through highly energetic ion implantation. In two-dimensional (2D) materials, the photoph
Autor:
R. P. A. Emmanuele, Alexander I. Tartakovskii, Paul M. Walker, A. Catanzaro, V. Shahnazaryan, M. Sich, M. S. Skolnick, F. A. Benimetskiy, Oleksandr Kyriienko, Freddie Withers, D. N. Krizhanovskii, Ivan A. Shelykh
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
Nature Communications
Nature Communications
Publisher's version (útgefin grein)
Highly nonlinear optical materials with strong effective photon-photon interactions are required for ultrafast and quantum optical signal processing circuitry. Here we report strong Kerr-like nonlinearities b
Highly nonlinear optical materials with strong effective photon-photon interactions are required for ultrafast and quantum optical signal processing circuitry. Here we report strong Kerr-like nonlinearities b
Autor:
Armando Genco, T. Godde, Eric Prestat, T. Taniguchi, Paul M. Walker, Alexander I. Tartakovskii, R. C. Schofield, A. P. Rooney, Sarah J. Haigh, D. N. Krizhanovskii, O. Del Pozo-Zamudio, Kenji Watanabe, S. Schwarz, Freddie Withers, C. Clark, Kostya S. Novoselov
Publikováno v:
2D Materials
Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting transition metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::706ecf529da0d6b22b7d86288b8af766
https://eprints.whiterose.ac.uk/162681/1/Del_Pozo-Zamudio_2020_2D_Mater._7_031006.pdf
https://eprints.whiterose.ac.uk/162681/1/Del_Pozo-Zamudio_2020_2D_Mater._7_031006.pdf
Autor:
Namphung, Peimyoo, Thorsten, Deilmann, Freddie, Withers, Janire, Escolar, Darren, Nutting, Takashi, Taniguchi, Kenji, Watanabe, Alireza, Taghizadeh, Monica Felicia, Craciun, Kristian Sommer, Thygesen, Saverio, Russo
Publikováno v:
Nature nanotechnology. 16(8)
Interlayer (IL) excitons, comprising electrons and holes residing in different layers of van der Waals bonded two-dimensional semiconductors, have opened new opportunities for room-temperature excitonic devices. So far, two-dimensional IL excitons ha