Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Fred Wafula"'
Publikováno v:
Journal of The Electrochemical Society. 166:D3136-D3141
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02aeaa573f14c5ddf3040d83d08e94e5
https://doi.org/10.1149/2.0161901jes
https://doi.org/10.1149/2.0161901jes
Publikováno v:
2018 IEEE International Interconnect Technology Conference (IITC).
Electrolytic cobalt fill of sub-5 nm node features and a proposed model for the fill mechanism supported by cyclic voltammetry is presented. The transformation of the organic plating additive from an active to a de-activated state at the bottom of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52c268c85eb8af2244f58767f0b78c2b
https://doi.org/10.1109/iitc.2018.8430384
https://doi.org/10.1109/iitc.2018.8430384
Autor:
Gyanaranjan Pattanaik, Peter Reilly, Anh Nguyen, Jack Enloe, Michael Flynn, Alison Gracias, Kevin Fealey, Fred Wafula
Publikováno v:
Journal of Microelectronics and Electronic Packaging. 12:43-48
This study addresses the impact of bath stability on electroplated copper for through-silicon via (TSV) in a controlled manufacturing environment. Microstructure, impurities, and other properties of the copper produced were characterized using an arr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6631544989131d3e371b898c9182a57f
https://doi.org/10.4071/imaps.448
https://doi.org/10.4071/imaps.448
Despite the importance of knowledge in Biology, candidates’ performance at the national examination, The Kenya Certificate of Secondary Education (KCSE) is poor. This could be attributed to the teaching methods. The purpose of this study was to com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d1965a422b738a0fb1cb93f44963a7e
Autor:
Anh Nguyen, Jack Enloe, Fred Wafula, Kevin Fealey, Peter Reilly, Alison Gracias, Gyanaranjan Pattanaik, Michael Flynn
Publikováno v:
International Symposium on Microelectronics. 2014:000013-000018
This study addresses the impact of bath stability on electroplated copper for through silicon via (TSV) in a controlled manufacturing environment. Microstructure, impurities and other properties of the copper produced were characterized using an arra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8fa5d5bc7d6376b6d6e74ab2606b181
https://doi.org/10.4071/isom-ta13
https://doi.org/10.4071/isom-ta13
Autor:
Tyler Barbera, Gert J. Leusink, Gyanaranjan Pattanaik, Fred Wafula, Larry Smith, Brian Sapp, Victor Vartanian, Toshio Hasegawa, Steve Golovato, Alison Gracias, Kaoru Maekawa, Shan Hu, Steve Olson, Jack Enloe, Kai-Hung Yu, Klaus Hummler
Publikováno v:
International Symposium on Microelectronics. 2014:000001-000007
SEMATECH evaluated the impact of various process options on the overall manufacturing cost of a TSV module, from TSV lithography and etch through post-plate CMP. The purpose of this work was to understand the cost differences of these options in orde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d12e43b9cb85bf97de970ea10e38478f
https://doi.org/10.4071/isom-ta11
https://doi.org/10.4071/isom-ta11
Autor:
Tyler Barbera, Klaus Hummler, Gyanaranjan Pattanaik, Larry Smith, Gert J. Leusink, Steve Olson, Brian Sapp, Kai-Hung Yu, Shan Hu, Akira Fujita, Alison Gracias, Jack Enloe, Kaoru Maekawa, Kenneth Matthews, Victor Vartanian, Fred Wafula
Publikováno v:
International Symposium on Microelectronics. 2014:000794-000803
Even as unit processes for high aspect ratio (HAR) through silicon via (TSV) mid-wafer front-side processing are becoming relatively mature, scaling of the TSVs and reduction of cost of ownership (COO) drive significant innovations in processes, equi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::847d8b085afbcb5aa5f4947b13ff4eac
https://doi.org/10.4071/isom-thp14
https://doi.org/10.4071/isom-thp14
Publikováno v:
ECS Meeting Abstracts. :1050-1050
As on-chip interconnect sizes continue to shrink to address the increased device density needs at 7 nm nodes and beyond, copper interconnects start showing an increase of electrical resistivity compared to bulk copper due to the scaling effect. Recen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88a5fb4593bb2ac97bca2cf219e7aaf7
https://doi.org/10.1149/ma2019-01/18/1050
https://doi.org/10.1149/ma2019-01/18/1050
Publikováno v:
Journal of Electronic Materials. 41:1898-1906
This paper presents a comprehensive study of the effect of poly(ethylene glycol) (PEG) degradation on the void formation known to take place sporadically at the interface between electroplated Cu and Pb-free solder. Thorough chemical analysis of our
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::542d5fa0cebf36a9cc97738a572b218f
https://doi.org/10.1007/s11664-012-2017-6
https://doi.org/10.1007/s11664-012-2017-6
Toward a Better Understanding of the Effect of Cu Electroplating Process Parameters on Cu3Sn Voiding
Publikováno v:
Journal of Electronic Materials. 41:302-312
“Kirkendall voiding” in the interfacial Cu3Sn intermetallic compound is often observed in solder joints made between Sn-containing alloys and Cu interconnect pads, during extended thermal aging or electromigration testing. It is commonly believed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93c42f4a7c6cae9cc936bd84fc9b59d6
https://doi.org/10.1007/s11664-011-1764-0
https://doi.org/10.1007/s11664-011-1764-0