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pro vyhledávání: '"Fred T K Cheung"'
Autor:
Fred T K Cheung, Huicai Zhong, Robert B. Ogle, Brian J. MacDonald, Jeremias D. Romero, Jay Bhakta, Cyrus E. Tabery, Yun Wu, Arvind Halliyal, Cristina Cheung
Publikováno v:
Journal of The Electrochemical Society. 150:G785
Thin silicon nitride films (less than 20 nm) deposited on (100) silicon substrates via low pressure chemical vapor deposition (LPCVD) at three temperatures (730, 760, and 825°C) were analyzed by spectroscopic ellipsometry (SE), attenuated total refl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::903a8960986ab0a651e49e53a7d47d71
https://doi.org/10.1149/1.1624842
https://doi.org/10.1149/1.1624842
