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pro vyhledávání: '"Fred Stanke"'
Publikováno v:
EDFA Technical Articles. 19:12-20
Scanning microwave impedance microscopy (sMIM) is a relatively new method for making electrical measurements on test samples in AFMs. This article presents examples in which sMIM technology is used to measure dielectric coefficients, doping concentra
Autor:
Fred Stanke, Oskar Amster, Yongliang Yang, St. J. Dixon-Warren, Benedict Drevniok, Stuart Friedman
Publikováno v:
Microelectronics Reliability. :214-217
Scanning microwave impedance microscopy (sMIM) is an emerging technique that has the potential to displace conventional scanning capacitance microscopy (SCM), and other electrical scanning probe microscopy (SPM) techniques, for the profiling of dopan
Autor:
St. J. Dixon-Warren, Oskar Amster, Benedict Drevniok, Fred Stanke, Yongliang Yang, Stuart Friedman
Publikováno v:
2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Scanning microwave impedance microscopy (sMIM) is an emerging electrical mode for scanning probe microscopy (SPM). We apply the technique to the profiling of dopants in semiconductor samples with sub-micron spatial resolution. This work demonstrates
Publikováno v:
International Symposium for Testing and Failure Analysis.
The use of Atomic Force Microscopy (AFM) electrical measurement modes is a critical tool for the study of semiconductor devices and process development. A relatively new electrical mode, scanning microwave impedance microscopy (sMIM), measures a mate
Publikováno v:
2016 IEEE MTT-S International Microwave Symposium (IMS).
As semiconductor technology advances, it can benefit from characterization of more complex materials with smaller geometries. Scanning Microwave Impedance Microscopy, sMIM, provides such with its measurements of the real and imaginary components of a
Conference
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