Zobrazeno 1 - 10
of 1 597
pro vyhledávání: '"Frayssinet A"'
Autor:
Souissi, H., Gromovyi, M., Septembre, I., Develay, V., Brimont, C., Doyennette, L., Cambril, E., Bouchoule, S., Alloing, B., Frayssinet, E., Zúñiga-Pérez, J., Ackemann, T., Malpuech, G., Solnyshkov, D. D, Guillet, T.
Publikováno v:
Optica 11, 962-970 (2024)
So far, exciton-polariton (polariton) lasers were mostly single mode lasers based on microcavities. Despite the large repulsive polariton-polariton interaction, pulsed mode-locked polariton laser was never reported. Here, we use a $60 \ \mu m-$long G
Externí odkaz:
http://arxiv.org/abs/2310.18661
Autor:
Giannazzo, F., Panasci, S. E., Schilirò, E., Greco, G., Roccaforte, F., Sfuncia, G., Nicotra, G., Cannas, M., Agnello, S., Frayssinet, E., Cordier, Y., Michon, A., Koos, A., Pécz, B.
The integration of two-dimensional $MoS_{2}$ with $GaN$ recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies have been mainly carried out using heteroepitaxial $GaN$ templates on sap
Externí odkaz:
http://arxiv.org/abs/2304.12213
Autor:
Greco, Giuseppe, Fiorenza, Patrick, Schilirò, Emanuela, Bongiorno, Corrado, Di Franco, Salvatore, Coulon, Pierre-Marie, Frayssinet, Eric, Bartoli, Florian, Giannazzo, Filippo, Alquier, Daniel, Cordier, Yvon, Roccaforte, Fabrizio
In this paper, the Ni Schottky barrier on GaN epilayer grown on free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscale electrical analysis by conductive atomic force microscopy (C-AFM) of
Externí odkaz:
http://arxiv.org/abs/2304.11680
Autor:
Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Salvatore Ethan Panasci, Salvatore Di Franco, Yvon Cordier, Eric Frayssinet, Raffaella Lo Nigro, Filippo Giannazzo, Fabrizio Roccaforte
Publikováno v:
AIP Advances, Vol 14, Iss 10, Pp 105109-105109-7 (2024)
Vertical Metal–Insulator–Semiconductor (MIS) capacitors with an Al2O3 thin film as a gate insulator have been fabricated on homoepitaxial GaN-on-GaN samples. The effect of the annealing treatments on the MIS characteristics has been investigated
Externí odkaz:
https://doaj.org/article/e339595115604dd1826e6fe07c31baa5
Autor:
Quach, Patrick, Jollivet, Arnaud, Babichev, Andrey, Isac, Nathalie, Morassi, Martina, Lemaitre, Aristide, Yunin, Pavel, Frayssinet, Eric, de Mierry, Philippe, Jeannin, Mathieu, Bousseksou, Adel, Colombelli, Raffaele, Tchernycheva, Maria, Cordier, Yvon, Julien, François
We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The device was grown by metal organic chemical vapor deposition on a c-sapphire substrate and relies on polar GaN/AlGaN step quantum wells. The active region
Externí odkaz:
http://arxiv.org/abs/2204.07117
Publikováno v:
Microbiology Spectrum, Vol 12, Iss 4 (2024)
ABSTRACTRecycled manure solids (RMS) is used as bedding material in cow housing but can be at risk for pathogens development. Cows spend several hours per day lying down, contributing to the transfer of potential mastitis pathogens from the bedding t
Externí odkaz:
https://doaj.org/article/69d777fba997492ea9a0f86e77510086
Publikováno v:
Cancer Biology & Medicine, Vol 20, Iss 12, Pp 1021-1034 (2023)
Immune adjuvants are immune modulators that have been developed in the context of infectious vaccinations. There is currently a growing interest in immune adjuvants due to the development of immunotherapy against cancers. Immune adjuvant mechanisms o
Externí odkaz:
https://doaj.org/article/35700de565c0488a961461b5d42dcf8c
Autor:
Bah, Micka, Alquier, Daniel, Lesecq, Marie, Defrance, Nicolas, Valente, Damien, Ngo, Thi Huong, Frayssinet, Eric, Portail, Marc, De Jaeger, Jean-Claude, Cordier, Yvon
Publikováno v:
In Materials Science in Semiconductor Processing 1 March 2024 171
Autor:
Tabataba-Vakili, Farsane, Brimont, Christelle, Alloing, Blandine, Damilano, Benjamin, Doyennette, Laetitia, Guillet, Thierry, Kurdi, Moustafa El, Chenot, Sébastien, Brändli, Virginie, Frayssinet, Eric, Duboz, Jean-Yves, Semond, Fabrice, Gayral, Bruno, Boucaud, Philippe
Publikováno v:
Appl. Phys. Lett. 117, 121103 (2020)
Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of 18 kW/cm2 have been achieved along with narrow
Externí odkaz:
http://arxiv.org/abs/2009.05118
Autor:
Tabataba-Vakili, Farsane, Alloing, Blandine, Damilano, Benjamin, Souissi, Hassen, Brimont, Christelle, Doyennette, Laetitia, Guillet, Thierry, Checoury, Xavier, Kurdi, Moustafa El, Chenot, Sébastien, Frayssinet, Eric, Duboz, Jean-Yves, Semond, Fabrice, Gayral, Bruno, Boucaud, Philippe
Publikováno v:
Opt. Lett. 45, 4276-4279 (2020)
Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley waveguide te
Externí odkaz:
http://arxiv.org/abs/2006.13800