Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Franziska Naumann"'
Publikováno v:
Frontiers in Psychology, Vol 11 (2020)
Adjustment disorders (ADs) belong to the worldwide most diagnosed mental disorders and are particularly frequent in patients with an underlying physical illness. Pulmonary arterial hypertension (PAH) is a severe and disabling disease, which significa
Externí odkaz:
https://doaj.org/article/ddafa50cb9734245824a2c7f4add1d90
Autor:
Jörg Haeberle, Karsten Henkel, Hassan Gargouri, Franziska Naumann, Bernd Gruska, Michael Arens, Massimo Tallarida, Dieter Schmeißer
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 4, Iss 1, Pp 732-742 (2013)
We report on results on the preparation of thin (
Externí odkaz:
https://doaj.org/article/085f5ffa5f374f9282fd7c970ba4a0d6
Autor:
Christoph Janowitz, Ali Mahmoodinezhad, Małgorzata Kot, Carlos Morales, Franziska Naumann, Paul Plate, Marvin Hartwig Zoellner, Florian Bärwolf, David Stolarek, Christian Wenger, Karsten Henkel, Jan Ingo Flege
Publikováno v:
Dalton Transactions. 51:9291-9301
The electronic band alignment of an alumina/zinc oxide thin-film heterostructure solely grown by atomic layer deposition has been determined by XPS/UPS depth profiling, correlating the electronic properties with the interface chemical composition.
Autor:
Franziska Naumann, Karsten Henkel, Jan Ingo Flege, Robert Meyer, Małgorzata Kot, Paul Plate, Marvin Hartwig Zoellner, Ali Mahmoodinezhad, Christoph Janowitz, Christian Wenger, Carlos Morales
Publikováno v:
Journal of Vacuum Science & Technology A. 39:062406
Indium oxide (InxOy) thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) using trimethylindium and oxygen plasma in a low-temperature range of 80–200 °C. The optical properties, chemical composition, crystallographic struc
Autor:
Hassan Gargouri, Simone Brizzi, Małgorzata Kot, Irina Kärkkänen, Jessica Schneidewind, Dieter Schmeißer, Franziska Naumann, Karsten Henkel, Chittaranjan Das
Publikováno v:
Surface and Coatings Technology. 324:586-593
A comparative study of thin titanium oxynitride (TiOxNy) films prepared by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium (TDMAT) and N2 plasma as well as titanium(IV)isopropoxide and NH3 plasma is reported. The compari
Autor:
Karsten Henkel, Irina Kärkkänen, Franziska Naumann, Chittaranjan Das, Simone Brizzi, Hassan Gargouri, Malgorzata Sowinska, Jessica Schneidewind, Dieter Schmeißer
Publikováno v:
Applied Surface Science. 381:42-47
Titanium oxynitride films are prepared by plasma enhanced atomic layer deposition method using two different precursors and nitrogen sources. Synchrotron radiation-based X-ray photoelectron spectroscopy and X-ray absorption spectroscopy are used to c
Autor:
Christoph Janowitz, Hassan Gargouri, Jan Ingo Flege, Ali Mahmoodinezhad, Franziska Naumann, Karsten Henkel, Paul Plate, Dieter Schmeißer
Publikováno v:
Journal of Vacuum Science & Technology A. 38:022404
Gallium oxide (Ga2O3) thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) applying a capacitively coupled plasma source where trimethylgallium (TMGa) as the gallium precursor and oxygen (O2) plasma were used in a substrate te
Autor:
Christoph Janowitz, Jan Ingo Flege, Bernd Gruska, Hassan Gargouri, Johanna Reck, Karsten Henkel, Franziska Naumann, Ali Mahmoodinezhad, Adrian Blümich
Publikováno v:
Journal of Vacuum Science & Technology B. 38:014014
In situ real-time ellipsometry (irtE) with a very high time resolution of 24 ms was applied to monitor the inductively coupled plasma enhanced atomic layer deposition (ALD) process of Al2O3 thin films to precisely resolve each step of the ALD process
Autor:
Detlef Kuhn, Franziska Naumann, Patrick Patzwald, Anja Volkhammer, Uta-Maria Weißleder, Hannes Will
Die Gesundheit Beschäftigter in Betrieben bleibt in deutschen Unternehmen ein Trendthema. Der Umgang mit digitalen Arbeitsmitteln, die Herausforderung der Bindung geeigneten Fachpersonals sowie Verschärfungen im Arbeitsschutz und die Erneuerung des
Publikováno v:
Journal of Vacuum Science & Technology A. 37:020914
The annealing of amorphous AlN and AlN/Al2O3 seed layers from atomic layer deposition (ALD) on sapphire substrates and their application as starting layers for metal-organic vapor phase epitaxial growth on sapphire was investigated. During annealing