Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Franziska F. Schlich"'
Publikováno v:
Acta Materialia. 126:264-271
In this work, the onset strains of fragmentation, the fracture strength, and fracture toughness of amorphous and crystalline Ge2Sb2Te5 (GST) films are determined. Using in situ methods, such as resistance measurements, reflectance anisotropy spectros
Autor:
Ralph Spolenak, Franziska F. Schlich
Publikováno v:
Acta Materialia. 110:122-130
Ultrathin Si films in the nanometer range are extensively used for electronic and optoelectronic devices. Their mechanical properties have a high impact on the durability of the devices during lifetime. Here, fragmentation and buckling of 8–103 nm
Publikováno v:
ACS Photonics. 2:178-182
Ultrathin semiconductors on metals constitute color filters, which selectively absorb wavelength ranges of incident light. This paper demonstrates that these coatings are attractive for tunable color devices by reversibly switching ultrathin phase-ch
Autor:
Tanja Etzelstorfer, Martin J. Süess, Julian Stangl, Jacopo Frigerio, Andreas Wyss, R. Geiger, Franziska F. Schlich
Publikováno v:
Measurement Science and Technology, 28 (2)
'Measurement Science and Technology ', vol: 28, pages: 025501-1-025501-7 (2017)
'Measurement Science and Technology ', vol: 28, pages: 025501-1-025501-7 (2017)
In this work the calibration of the directional Raman strain shift coefficient for tensile strained Ge microstructures is reported. The strain shift coefficient is retrieved from micro-Raman spectroscopy measurements in combination with absolute stra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d8f05d72d5ddea888bd03fc41c5b0e6e
https://hdl.handle.net/20.500.11850/191484
https://hdl.handle.net/20.500.11850/191484