Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Franz P. G. Fengler"'
Autor:
Violetta Sessi, Maik Simon, Halid Mulaosmanovic, Darius Pohl, Markus Loeffler, Tom Mauersberger, Franz P. G. Fengler, Terence Mittmann, Claudia Richter, Stefan Slesazeck, Thomas Mikolajick, Walter M. Weber
Publikováno v:
Advanced Electronic Materials, Vol 6, Iss 4, Pp n/a-n/a (2020)
Abstract The design and characterization of a Schottky‐type ferroelectric field‐effect transistor based on a nominally undoped silicon nanowire are reported. The nanowire transistor is fabricated by top‐down technology starting from a silicon
Externí odkaz:
https://doaj.org/article/c348f539b37340f5b1ff290327d2013a
Autor:
Pintilie Lucian, Stefan Slesazeck, Franz P. G. Fengler, Raluca Negrea, Terence Mittmann, Michael J. Hoffmann, Thomas Mikolajick, Benjamin Max, Melanie Herzig, Uwe Schroeder
Publikováno v:
Nature. 565:464-467
The properties of ferroelectric materials, which were discovered almost a century ago¹ , have led to a huge range of applications, such as digital information storage² , pyroelectric energy conversion³ and neuromorphic computing⁴⁻⁵ . Recentl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ff1ae4c9d540d8d6f867bb5b15b0bd7
https://doi.org/10.1038/s41586-018-0854-z
https://doi.org/10.1038/s41586-018-0854-z
Autor:
Min Hyuk Park, Thomas Mikolajick, Terence Mittmann, Claudia Richter, Franz P. G. Fengler, Uwe Schroeder
Publikováno v:
Microelectronic Engineering. 178:48-51
The recently reported ferroelectric phase in doped hafnium oxide films enabled various devices ranging from non-volatile applications to negative capacitance field effect transistors. This study analyses the structural and electrical changes in ferro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::facbed3756aecbe5044bfedd1247b2ac
https://doi.org/10.1016/j.mee.2017.04.031
https://doi.org/10.1016/j.mee.2017.04.031
Autor:
Young Hwan Lee, Tony Schenk, Franz P. G. Fengler, Han Joon Kim, Uwe Schroeder, Woongkyu Lee, Keum Do Kim, Cheol Seong Hwang, Thomas Mikolajick, Min Hyuk Park
Publikováno v:
Nanoscale. 9:9973-9986
The unexpected ferroelectric properties of nanoscale hafnia-zirconia are considered to be promising for a wealth of applications including ferroelectric memory, field effect transistors, and energy-related applications. However, the reason why the un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10ce51bc5fd731f623f7104385374bdd
https://doi.org/10.1039/c7nr02121f
https://doi.org/10.1039/c7nr02121f
Extensive research has been performed in the past to understand the mechanisms responsible for the instabilities during electric field cycling of ferroelectric HfO2. In this chapter, the wake-up, imprint, and fatigue effect of fluorite structure-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::157f35e25137a5b9522316a16307f77d
https://doi.org/10.1016/b978-0-08-102430-0.00017-6
https://doi.org/10.1016/b978-0-08-102430-0.00017-6
Autor:
Walter M. Weber, Halid Mulaosmanovic, Thomas Mikolajick, Franz P. G. Fengler, Tom Mauersberger, Maik Simon, Markus Loeffler, Terence Mittmann, Darius Pohl, Violetta Sessi, Stefan Slesazeck, Claudia Richter
Publikováno v:
Advanced Electronic Materials. 6:1901244
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94b0d582fe7148d20fcc6969df1fe397
https://doi.org/10.1002/aelm.201901244
https://doi.org/10.1002/aelm.201901244
Autor:
Robin Nigon, Uwe Schroeder, Everett D. Grimley, Violetta Sessi, Rico Hentschel, Paul Muralt, James M. LeBeau, Xiahan Sang, Franz P. G. Fengler, Thomas Mikolajick
The discovery of the ferroelectric orthorhombic phase in doped hafnia films has sparked immense research efforts. Presently, a major obstacle for hafnia's use in high-endurance memory applications like nonvolatile random-access memories is its unstab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::745b6d4387e940afd65873a85d7d6266
https://tud.qucosa.de/id/qucosa:80496
https://tud.qucosa.de/id/qucosa:80496
Autor:
Thomas Mikolajick, Darius Pohl, Jacob L. Jones, Tony Schenk, Michael J. Hoffmann, Milan Pešić, Chuanzhen Zhou, Uwe Schroeder, Min Hyuk Park, Franz P. G. Fengler, Claudia Richter, Bernd Rellinghaus, Ching-Chang Chung
Recently simulation groups have reported the lanthanide series elements as the dopants that have the strongest effect on the stabilization of the ferroelectric non-centrosymmetric orthorhombic phase in hafnium oxide. This finding confirms experimenta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99f623132b4302b5775a62b48b21910b
https://tud.qucosa.de/id/qucosa:81038
https://tud.qucosa.de/id/qucosa:81038
Autor:
Daniel K. Simon, Thomas Henke, Ingo Dirnstorfer, Paul M. Jordan, Thomas Mikolajick, Franz P. G. Fengler, Johann W. Bartha
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 9:631-635
This value is achieved due to a very low interface trap density of below 1010 eV–1 cm–2 and a fixed charge density of (2–3) × 1012 cm–2. In contrast, plasma ALD-grown Al2O3 layers only reach carrier lifetimes of about 1 ms. This is mainly ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fbb042ade8c2f0eaf8e3f180d36ccb6
https://doi.org/10.1002/pssr.201510306
https://doi.org/10.1002/pssr.201510306
Autor:
Thomas Mikolajick, Benjamin Max, Stefan Slesazeck, Franz P. G. Fengler, Michael J. Hoffmann, Uwe Schroeder
Publikováno v:
Advanced Energy Materials. 9:1901154
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4196ef24c7d219afd51ed5677d8bebe
https://doi.org/10.1002/aenm.201901154
https://doi.org/10.1002/aenm.201901154