Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Franz Murauer"'
Publikováno v:
ECS Transactions. 16:549-559
Wafer bonding behavior of plasma activated Si and SiO2 surfaces was investigated. Process evaluation was performed by various experiments. Surface energy of wafer pairs bonded after different storage times at room temperature and after thermal anneal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d6a1a83ac0e9a518c3b0aeada77126a
https://doi.org/10.1149/1.2982910
https://doi.org/10.1149/1.2982910
Publikováno v:
Journal of Electroanalytical Chemistry. 470:1-8
Standard electrode reaction rate constants for the one-electron reduction of Eu(CF3SO3)3 on mercury in different concentrations of the supporting electrolyte tetrabutylammonium perchlorate in dimethylsulfoxide have been measured. Two techniques (i) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4340fc579bca98e2a0c390091adc396
https://doi.org/10.1016/s0022-0728(99)00199-0
https://doi.org/10.1016/s0022-0728(99)00199-0
Publikováno v:
MRS Proceedings. 1139
Metal layers can be used as bonding layers at wafer-level in MEMS manufacturing processes for device assembly as well as just for electrical integration of different levels. One has to distinguish between two main types of processes: metal diffusion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fea83f688d0d10c6314701f11d3ce316
https://doi.org/10.1557/proc-1139-gg03-33
https://doi.org/10.1557/proc-1139-gg03-33