Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Franz Hirler"'
Autor:
Thorsten Arnold, Franz Hirler, Alexander Philippou, Moritz Hauf, Ilaria Imperiale, Roman Baburske, Hans-Jurgen Thees, Christian Philipp Sandow, Rudolf Elpelt
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The conduction losses of trench insulated-gate bipolar transistors (TIGBTs) can be reduced using a larger channel width, but their short-circuit ruggedness degrades without taking an appropriate countermeasure. Here, we propose a short-circuit rugged
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::193d19a29b3bf3d107e49b4a8910fe7a
https://doi.org/10.1109/ispsd46842.2020.9170175
https://doi.org/10.1109/ispsd46842.2020.9170175
Publikováno v:
Microelectronics Reliability. 43:1895-1900
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0673f630c6f1e7dbe915b81b91c3f11b
https://doi.org/10.1016/s0026-2714(03)00322-6
https://doi.org/10.1016/s0026-2714(03)00322-6
Autor:
Franz Hirler, Holger Kapels
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's.
The drift zone of superjunction devices consists of compensated n- and p-columns. The manufacturability of such devices is based on the thorough control of acceptors and donator concentrations. Shrinking the cell pitch to a few micrometers requires c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d4d949afdd9f6fc05ec5a81b1bdfae3
https://doi.org/10.1109/ispsd.2009.5158061
https://doi.org/10.1109/ispsd.2009.5158061
Autor:
R. Siemieniec, Ludwig Josef Balk, Christian Geissler, Maximilian Rösch, Franz Hirler, A. Pugatschow, I. Pawel
Publikováno v:
2007 European Conference on Power Electronics and Applications.
The avalanche behavior of new 150 V trench power MOSFETs was designed with the help of two- dimensional device simulation techniques. The devices employ the compensation principle for low on-state losses. A new edge-termination structure ensures that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7316b3154d0a173c81736265a16d85f
https://doi.org/10.1109/epe.2007.4417220
https://doi.org/10.1109/epe.2007.4417220
Autor:
Andreas Schlögl, Jan Ropohl, Ralf Siemieniec, Uli Hiller, Maximilian Rösch, N. Soufi-Amlashi, Franz Hirler
Publikováno v:
2006 12th International Power Electronics and Motion Control Conference.
A new, rugged 100 V power MOSFET of the OptiMOS?2-family is described. By applying compensation principles, a device technology was developed that combines low on-state resistance R ON with outstanding switching properties. The technology also offers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35129fff2aed375b7f2d283686735a79
https://doi.org/10.1109/epepemc.2006.4778371
https://doi.org/10.1109/epepemc.2006.4778371
Autor:
Jan Ropohl, R. Siemieniec, Franz Hirler, N. Soufi-Amlashi, A. Schogl, Uli Hiller, Maximilian Rösch
Publikováno v:
2005 European Conference on Power Electronics and Applications.
A new 100-V power MOSFET of the OPTIMOSreg 2-family is described. The application of compensation principles leads to a device technology that combines low RON with outstanding switching properties. The technology also offers small gate charge QG and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c890c7fbd8947ae3f7f2711d1193f6a3
https://doi.org/10.1109/epe.2005.219377
https://doi.org/10.1109/epe.2005.219377
Publikováno v:
Simulation of Semiconductor Processes and Devices 2004 ISBN: 9783709172124
The failure mechanism caused by avalanche stress in power devices consisting of large DMOS cell arrays is investigated using electrothermal device simulation. To this end, we use the approximation of an infinitely large array, but allow for thermal i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95019d1a736b89d14d4e698e1ef5bf8b
https://doi.org/10.1007/978-3-7091-0624-2_49
https://doi.org/10.1007/978-3-7091-0624-2_49
Publikováno v:
IET Circuits, Devices & Systems. 1:341
The avalanche behaviour of a new trench power MOSFET was investigated with the help of measurements and electro-thermal device simulation techniques. Two different destruction regimes were identified experimentally: energy-related destruction and cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b03c768abd1d47841542a5445b7ac829
https://doi.org/10.1049/iet-cds:20060370
https://doi.org/10.1049/iet-cds:20060370
Autor:
Siemieniec, R., Hirler, F., Schlogl, A., Rosch, M., Soufi-Amlashi, N., Ropohl, J., Hiller, U.
Publikováno v:
2006 12th International Power Electronics & Motion Control Conference; 2006, p32-37, 6p
Publikováno v:
2006 12th International Power Electronics & Motion Control Conference; 2006, pxii-xxxviii, 27p