Zobrazeno 1 - 10
of 132
pro vyhledávání: '"Franz Heider"'
Autor:
Sasmita Srichandan, Franz Heider, Yulia Polak, Georg Ehrentraut, Laszlo Juhasz, Martin Haberjahn, Egidijus Sakalauskas, Ronny Haupt
Publikováno v:
2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Publikováno v:
2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Publikováno v:
2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Roughness measurements on epitaxial layers before and after etching were done with an atomic force microscope (AFM) with sub-Angstrom repeatability. Furthermore, surface roughness was monitored with AFM after chemical mechanical polishing, before a w
Autor:
Kin Loon Chow, Jeffrey W. Roberts, Franz Heider, Christian Janeschitz, Martin Haberjahn, Chi Eng New
Publikováno v:
2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
The depth between an oxide at the wafer surface and a poly silicon plug in a trench was determined with scatterometry using a polarized reflectometer. Poly recess depth is an important parameter in trench MOSFET technologies that needs to be monitore
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Optical profilometer measurements are contact-free and fast. The depth of single high-aspect-ratio trenches and the step height of opaque materials can be measured. Deep trenches (50–225 µm) are measured with a white light interferometer. Shallowe
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).
Epitaxial silicon layers with low and intermediate resistivity were investigated with a contact-free capacitance versus voltage method. The low resistivity sample with 0.15 Ohm cm had long-term repeatability and reproducibility over 3 days with a fra
Autor:
Lu Yu, Florian Flach, Martin Haberjahn, T. Shapoval, Qing Ye, Walter Petersmann, Jianli Cui, Ronny Haupt, Franz Heider
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).
The resistivity (doping level) in epitaxial and implant layers has high impact on electrical device parameters of power semiconductors. However, precise control of electrical layer resistivity with the four-point-probe (4PP) technique is still challe
Publikováno v:
Physics of the Earth and Planetary Interiors. 126:59-73
The apparent successful application of the Thellier’s method of paleointensity or paleofield direction determinations on multi-domain (MD) and pseudo-single-domain (PSD) grains suggests the validity of the Thellier’s laws of independence and addi
Autor:
Franz Heider, Adrian R. Muxworthy
Publikováno v:
Studia Geophysica et Geodaetica. 45:283-296
Five samples from historical lava flows on Mt. Etna, which had previously been used in a palaeointensity study, were examined using a combination of rock magnetic and microscopic techniques to elucidate the causes of failure of palaeointensity determ
Publikováno v:
Earth and Planetary Science Letters. 184:141-154
A record of an excursion of the Earth’s magnetic field was found in a ∼14.3 Myr old lava sequence of the shield basalts from Gran Canaria (Canary Islands). The thermal and alternating field demagnetization of the samples from 14 subsequent lava f