Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Franky Lumbantoruan"'
Autor:
Jian Hao Huang, Firman Mangasa, Yung Yi Tu, Edward Yi Chang, Ren Yao Huang, Xia Xi Zheng, Ching-Ting Lee, Franky Lumbantoruan
Publikováno v:
Journal of Crystal Growth. 501:7-12
We report the effects of the growth temperature on the structural and electrical properties of the InAlGaN/GaN heterostructures grown on c-plane sapphire substrates. X-ray Photoelectron Spectroscopy and Atomic Force Microscopy measurements results in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb1fd05159f9bd9fea6a1321ed7d2ad4
https://doi.org/10.1016/j.jcrysgro.2018.08.015
https://doi.org/10.1016/j.jcrysgro.2018.08.015
Autor:
Huan-Chung Wang, Ping-Cheng Han, Quang Ho Luc, Franky Lumbantoruan, Po-Chun Chang, Kun-Sheng Yang, Chia-Hsun Wu, Yen-Ku Lin, Yueh-Chin Lin, Yu-Hsuan Ho, Edward Yi Chang, Shih-Chien Liu, Jian-You Chen, Ting-En Hsieh
Publikováno v:
IEEE Electron Device Letters. 39:991-994
A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for normally-OFF operation. The ferroelectric (FE) polarization increases the number of trapped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a5cbc9fef4918fc75f1c2acce6560f1
https://doi.org/10.1109/led.2018.2825645
https://doi.org/10.1109/led.2018.2825645
Autor:
Ting-En Hsieh, Yueh-Chin Lin, Chia-Hsun Wu, Edward Yi Chang, Franky Lumbantoruan, Huan-Chung Wang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1136-1141 (2018)
We demonstrate the electrical performances of the quaternary InAlGaN/GaN MIS-HEMTs with high quality SiNx gate dielectric and surface passivation layer deposited by low pressure chemical vapor deposition (LPCVD) at 780 °C. Excellent LPCVD-SiNx/InAlG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44d0cb68524e269031f05c2e3750caa9
https://doi.org/10.1109/jeds.2018.2869776
https://doi.org/10.1109/jeds.2018.2869776
Autor:
Po-Chun Chang, Yueh-Chin Lin, Edward Yi Chang, C. H. Hsiao, Franky Lumbantoruan, Chia-Hsun Wu, Simon M. Sze, Yen-Ku Lin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 856-860 (2018)
In this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device with $W_{\mathrm{ fin}}$ down to 20 nm, EOT of 2.1 nm, and $L_{G} = 60$ nm shows high $I_{\mathrm{ ON}} = 188~\mu \text{A}/\mu \text{m}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0838f9a2f692d84a57df0fec8a4fb6a5
https://doi.org/10.1109/jeds.2018.2859811
https://doi.org/10.1109/jeds.2018.2859811
Publikováno v:
Journal of Electronic Materials. 46:6104-6110
NH3 flow rate during AlGaN barrier layer growth not only affects the growth efficiency and surface morphology as a result of parasitic reactions but also influences the concentration of carbon impurity in the AlGaN barrier. Carbon, which decomposes f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6efccd3f374866b244c7c0f5bb7af547
https://doi.org/10.1007/s11664-017-5550-5
https://doi.org/10.1007/s11664-017-5550-5
Autor:
Edward Yi Chang, Yueh Chin Lin, Burhanuddin Yeop Majilis, Yuan Lin, Franky Lumbantoruan, Chang Fu Dec
Publikováno v:
2018 IEEE International Conference on Semiconductor Electronics (ICSE).
We demonstrate the digital etching (DE) process to fabricated E-mode p-GaN/AIGaN/GaN HEMT. DE process comprising low power oxygen (02) plasma oxidizing and low power boron trichloride (BCl 3 ) plasma etching to selectively remove p-GaN layer. The ato
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::959923ee51b49671872fb7110be0cd95
https://doi.org/10.1109/smelec.2018.8481283
https://doi.org/10.1109/smelec.2018.8481283
Autor:
Yu-Chien Chiu, Hiroshi Iwai, Chung Kai Huang, P. C. Han, Franky Lumbantoruan, C. Y. Chang, Edward Yi Chang, Chenming Hu, Chih-Chiang Wu, Chang Po-Sheng, Lin Yue-Cin, Shih-Chien Liu, Chuang-Ju Lin
Publikováno v:
2017 Symposium on VLSI Technology.
In this work, we demonstrate a new concept for realizing high threshold voltage (V th ) E-mode GaN power devices with high maximum drain current (I D, max ). A gate stack ferroelectric blocking film with charge trap layer, achieved a large positive s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3922a29aeaa673d5a63f966f0e8f391
https://doi.org/10.23919/vlsit.2017.7998201
https://doi.org/10.23919/vlsit.2017.7998201
Autor:
Tien Tung Luong, Shane Chang, Franky Lumbantoruan, Yen Yu Chen, Yueh-Chin Lin, Edward Yi Chang, Yen Teng Ho
Publikováno v:
2017 China Semiconductor Technology International Conference (CSTIC).
The effect of different buffer layers on the RF losses of GaN-based high-mobility-transistors (HEMTs) on Si substrate has been studied. It is found that the electron inversion layer induced by the residual tensile stress in AlN buffer is responsible
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43b91da6a337509ebc9af3274f45f1be
https://doi.org/10.1109/cstic.2017.7919884
https://doi.org/10.1109/cstic.2017.7919884
Autor:
Tseung-Yuen Tseng, Sridhar Chandrasekaran, Franky Lumbantoruan, Firman Mangasa Simanjuntak, Chih Chieh Yang, Chu Jie Huang, Pragya Singh, Chun Chieh Lin
Publikováno v:
Semiconductor Science and Technology. 32:124003
An engineering nanorod array in a ZnO-based electrochemical metallization device for nonvolatile memory applications was investigated. A hydrothermally synthesized nanorod layer was inserted into a Cu/ZnO/ITO device structure. Another device was fabr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::922b0566d4f14098f2749315f3702100
https://doi.org/10.1088/1361-6641/aa9598
https://doi.org/10.1088/1361-6641/aa9598
Autor:
Franky Lumbantoruan, Yueh Chin Lin, Tsu Ting Lee, Shoou-Jinn Chang, Ramesh Kumar Kakkerla, Edward Yi Chang, Po-Chun Chang, Chih Jen Hsiao
Publikováno v:
Applied Physics Letters. 111:162108
In this study, we demonstrate the growth of a 150-nm-thick GaSb layer on a GaAs substrate with excellent film quality using the interfacial misfit dislocation growth mode by the Metal–Organic Chemical Vapor Deposition technique. The n-type GaSb epi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::127ae9b064f05d1bb4a730c5ab27ab3e
https://doi.org/10.1063/1.5008737
https://doi.org/10.1063/1.5008737