Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Frankowski, Marek"'
Autor:
Skowronski, Witold, Lazarski, Stanislaw, Mojsiejuk, Jakub, Checinski, Jakub, Frankowski, Marek, Nozaki, Takayuki, Yakushiji, Kay, Yuasa, Shinji
Voltage-induced ferromagnetic resonance (V-FMR) in magnetic tunnel junctions (MTJs) with a W buffer is investigated. Perpendicular magnetic anisotropy (PMA) energy is controlled by both thickness of a CoFeB free layer deposited directly on the W buff
Externí odkaz:
http://arxiv.org/abs/1906.01301
Publikováno v:
Phys. Rev. B 96, 174438 (2017)
We describe the dynamics of an antiferromagnetic nano-oscillator in an external magnetic field of any given time distribution. The oscillator is powered by a spin current originating from spin-orbit effects in a neighboring heavy metal layer, and is
Externí odkaz:
http://arxiv.org/abs/1708.05590
Autor:
Ogrodnik, Piotr, Stobiecki, Tomasz, Barnaś, Józef, Frankowski, Marek, Chęciński, Jakub, Vetrò, Francesco Antonio, Ansermet, Jean-Philippe
Publikováno v:
J. Phys. D: Appl. Phys. 52 065002 (2019)
An analytical model of the spin-diode effect induced by resonant spin-transfer torque in a ferromagnetic bilayer with strong dipolar coupling provides the resonance frequencies and the lineshapes of the magnetic field spectra obtained under field or
Externí odkaz:
http://arxiv.org/abs/1706.01036
We propose a novel setup for a spin-torque oscillator reader in magnetic hard disk drive technology. Two adjacent bit tracks are to be read simultaneously, leading to high data transfer rate and increased resilience to noise as the lateral size of th
Externí odkaz:
http://arxiv.org/abs/1705.07726
Autor:
Skowroński, Witold, Czapkiewicz, Maiej, Ziętek, Sławomir, Chęciński, Jakub, Frankowski, Marek, Rzeszut, Piotr, Wrona, Jerzy
Perpendicular magnetic tunnel junctions (MTJ) with a bottom pinned reference layer and a composite free layer (FL) are investigated. Different thicknesses of the FL were tested to obtain an optimal balance between tunneling magnetoresistance (TMR) ra
Externí odkaz:
http://arxiv.org/abs/1701.06411
We present a comprehensive theoretical and experimental study of voltage-controlled standing spin waves resonance (SSWR) in PMN-PT/NiFe multiferroic heterostructures patterned into microstrips. A spin-diode technique was used to observe ferromagnetic
Externí odkaz:
http://arxiv.org/abs/1610.04500
Autor:
Frankowski, Marek, Żywczak, Antoni, Czapkiewicz, Maciej, Ziętek, Sławomir, Kanak, Jarosław, Banasik, Monika, Powroźnik, Wiesław, Skowroński, Witold, Chęciński, Jakub, Wrona, Jerzy, Głowiński, Hubert, Dubowik, Janusz, Ansermet, Jean-Philippe, Stobiecki, Tomasz
We present a thorough research on Ta/Ru-based buffers and their influence on features crucial from the point of view of applications of MTJs, such as critical switching current and thermal stability. We investigate devices consisting of buffer/FeCoB/
Externí odkaz:
http://arxiv.org/abs/1502.06418
Autor:
Ziętek, Sławomir, Ogrodnik, Piotr, Frankowski, Marek, Chęciński, Jakub, Wiśniowski, Piotr, Skowroński, Witold, Wrona, Jerzy, Stobiecki, Tomasz, Żywczak, Antoni, Barnaś, Józef
We report on a highly efficient spin diode effect in an exchange-biased spin-valve giant magnetoresistance (GMR) strips. In such multilayer structures, symmetry of the current distribution along the vertical direction is broken and, as a result, a no
Externí odkaz:
http://arxiv.org/abs/1410.6672
Autor:
Skowroński, Witold, Frankowski, Marek, Wrona, Jerzy, Stobiecki, Tomasz, Ogrodnik, Piotr, Barnaś, Józef
We report on a voltage tunable radio-frequency (RF) detector based on a magnetic tunnel junction (MTJ). The spin-torque diode effect is used to excite and/or detect RF oscillations in the magnetic free layer of the MTJ. In order to reduce the overall
Externí odkaz:
http://arxiv.org/abs/1406.6935
Autor:
Skowroński, Witold, Czapkiewicz, Maciej, Frankowski, Marek, Wrona, Jerzy, Stobiecki, Tomasz, Reiss, Günter, Chalapat, Khattiya, Paraoanu, Gheorghe S., van Dijken, Sebastiaan
Publikováno v:
Physical Review B 87, 094419 (2013)
Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of an RF cur
Externí odkaz:
http://arxiv.org/abs/1301.7186