Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Franklin D. Kalk"'
Publikováno v:
Photomask Technology 2021.
The global photomask business faces both substantial opportunities and challenges in the coming decade. The semiconductor business is forecasted to grow at 9.9% CAGR from 2020 - 20301 which will drive growth in the photomask market. Coincident with t
Autor:
Edita Tejnil, John L. Sturtevant, Fritz Gans, Paul Ackmann, Kent H. Nakagawa, Ana Armeanu, Michael Lam, Peter Buck, Guoxiang Ning, Christian Buergel, Kostas Adam, Franklin D. Kalk, Steffen Schulze, Michael Oliver, David Fryer, Chris Clifford
Publikováno v:
SPIE Proceedings.
This study quantifies the impact of systematic mask errors on OPC model accuracy and proposes a methodology to reconcile the largest errors via calibration to the mask error signature in wafer data. First, we examine through simulation, the impact of
Autor:
Peter Buck, Guoxiang Ning, Franklin D. Kalk, Kent H. Nakagawa, Steffen Schulze, Christian Buergel, John L. Sturtevant, Fritz Gans, Paul Ackmann, Edita Tejnil
Publikováno v:
SPIE Proceedings.
Computational lithography solutions rely upon accurate process models to faithfully represent the imaging system output for a defined set of process and design inputs. These models rely upon the accurate representation of multiple parameters associat
Publikováno v:
ISQED
Photomasks have evolved from simple replicators of design layout for lithography to become complex translators of design intent for sub-wavelength imaging systems while at the same time maintaining a cost efficiency that exceeds Moore's Law predictio
Autor:
Joseph S. Gordon, Scott Warrick, Mazen Saied, Craig A. West, Franklin D. Kalk, Mark D. Smith, Jan Pieter Kuijten, Mike Pochkowski, Kevin Lucas, Will Conley
Publikováno v:
SPIE Proceedings.
The semiconductor industry will soon be putting >=1.07NA 193nm immersion lithography systems into production for the 45nm device node and in about three years will be putting >=1.30NA systems into production for the 32nm device node. For these very h
Publikováno v:
SPIE Proceedings.
Maskless Lithography (ML2) is again being considered for use in mainstream CMOS IC manufacturing. Sessions at technical conferences are being devoted to ML2. A multitude of new companies have been formed in the last several years to apply new concept
Autor:
Franklin D. Kalk, Susan S. MacDonald, Rusty Carter, Curt Jackson, Robert Kiefer, Joe Perez, Kirk J. Strozewski
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XVIII.
Reticle costs are increasing as users tighten specifications to accommodate the shrinking process windows in advanced semiconductor lithography. Tighter specs often drive the use of e-beam based mask processes, which produce better mask pattern acuit
Autor:
Alden Acheta, Adam R. Pawloski, Franklin D. Kalk, Harry J. Levinson, Christopher A. Spence, Christian Chovino, Yunfei Deng, Eric Johnstone, Laurent Dieu, Bruno La Fontaine
Publikováno v:
SPIE Proceedings.
The impact of wafer and reticle anti-reflection coatings (ARCs) on the aerial image of ArF lithography scanners is measured using contrast curves and critical dimension (CD) analysis. The importance of a good ARC layer on the wafer appears to be grea
Autor:
Henning Haffner, Roman Liebe, Franklin D. Kalk, Jerry Xiaoming Chen, Anja Rosenbusch, Shirley Hemar
Publikováno v:
SPIE Proceedings.
The industry roadmap for IC manufacturing at design rules of 90nm and below foresees low k1-factor optical lithography at 193nm exposure wavelength. Aggressive model-based OPC and Phase Shift Mask technology are being used more and more frequently in
Publikováno v:
SPIE Proceedings.
High quality reticles are critical to the success of the 90 nm wafer node. Even though many wafer fabs are planning to use 193nm exposure tools, the k 1 factor (minimum feature size x NA/λ) will be pushed to very low levels. With low k 1 lithography