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Novel chlorine-enriched SiO2/Si3N4 bilayers to downscale gate dielectrics toward sub-45nm and beyond
Autor:
Frank. C.C. Wang, J.Y. Wu, Michael Chan, Shao Wei Wang, Chan Lon Yang, Yu-Ren Wang, Charles Cl Lin, Tsuo Wen Lu
Publikováno v:
2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP).
We have developed a low leakage and highly reliable SiON gate dielectrics by using novel low temperature deposition of chlorine-enriched silicon nitride upon a thin oxide. This method can achieve higher top-to-bottom nitrogen concentration ratio and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::004f955329fe6e09552ff6ae9ea4f1de
https://doi.org/10.1109/rtp.2010.5623791
https://doi.org/10.1109/rtp.2010.5623791
