Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Frank van de Mast"'
Autor:
Marc Noot, Elliott McNamara, Chan Hwang, Kaustuve Bhattacharyya, Seung Yoon Lee, Frank van de Mast, Nang-Lyeom Oh, Se-Ra Jeon, Joost van Heijst, Noh-Kyoung Park, Arie Jeffrey Den Boef, Kun-tack Lee, Kevin An, SeungHwa Oh, Greet Storms
Publikováno v:
SPIE Proceedings.
With the increase of process complexity in advanced nodes, the requirements of process robustness in overlay metrology continues to tighten. Especially with the introduction of newer materials in the film-stack along with typical stack variations (th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efd0e3530c1f43ec58e9259ce2f607b1
https://doi.org/10.1117/12.2222040
https://doi.org/10.1117/12.2222040
Autor:
Jan Mulkens, Frank van de Mast, Peter Ten Berge, Daan Slotboom, Dick Verkleij, Martyn Coogans, Wolfgang Henke, Michael Kubis, Tom Hoogenboom, Emil Schmitt-Weaver
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
While semiconductor manufacturing is moving towards the 14nm node using immersion lithography, the overlay requirements are tightened to below 5nm. Next to improvements in the immersion scanner platform, enhancements in the overlay optimization and p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18e02fce824b53259d982fa9690d43f4
https://doi.org/10.1117/12.2046914
https://doi.org/10.1117/12.2046914
Autor:
Frank van de Mast, Stefan van Cleef, Toine de Kort, Marten de Wit, Tom Castenmiller, Raf Stegen, Coen van de Vin
Publikováno v:
SPIE Proceedings.
Optical lithography, currently being used for 45-nm semiconductor devices, is expected to be extended further towards the 32-nm and 22-nm node. A further increase of lens NA will not be possible but fortunately the shrink can be enabled with new reso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::241c148fe1426d71ee98ae32884a0fd9
https://doi.org/10.1117/12.847025
https://doi.org/10.1117/12.847025
Autor:
Richard Droste, Bert Vleeming, Frank van de Mast, Tom Castenmiller, Fred de Jong, Bert van der Pasch
Publikováno v:
SPIE Proceedings.
The lithography roadmap demands overlay reduction along with increased productivity. New applications are proposed as lithography solution for the 32-nm node and possibly beyond. Most of them require very tight overlay and multiple exposures. Major c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55345996adaa5ba2fb21c9f34fa65585
https://doi.org/10.1117/12.814254
https://doi.org/10.1117/12.814254
Autor:
Thomas Rohe, Frank van de Mast, Daniel Smith, Klaus Kornitzer, Jos de Klerk, Paul Graeupner, Steven G. Hansen, Eelco van Setten, Richard Droste, Louis Jorritsma, Richard du Croo de Jongh, Mark van de Kerkhof
Publikováno v:
SPIE Proceedings.
As the semiconductor industry looks into the near future to extend manufacturing beyond 100nm, a new optical lithography system was developed by ASML. To achieve the aggressive industry roadmap and enable high volume manufacturing of sub 100nm resolu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46a5efcf8d5cb1ca3c75edad28914ac9
https://doi.org/10.1117/12.485372
https://doi.org/10.1117/12.485372