Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Frank Wünsch"'
Autor:
A. Laades, Frank Wünsch, Lars Korte, Marinus Kunst, Uta Stürzebecher, E. Conrad, Manfred Schmidt, Heike Angermann
Publikováno v:
physica status solidi c. 8:879-882
Surface charge, surface state density and interface recombination behavior on polished float zone (FZ) solar cell substrates were investigated after various wet-chemical pre-cleaning procedures and deposition of amorphous silicon (a-Si:H) or silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a88cb7348baa1def44867e73ae7ecd7
https://doi.org/10.1002/pssc.201000236
https://doi.org/10.1002/pssc.201000236
Publikováno v:
Journal of Electroanalytical Chemistry. 609:31-41
Semiconductor (photo)electrochemical knowledge is mostly based on potential dependent (photo)current measurements, on electrons turned over by the semiconductor electrode. Photo or potential induced microwave reflection measurements can provide infor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21c3f452a2432a0a4f0c06b14f38a1c8
https://doi.org/10.1016/j.jelechem.2007.06.007
https://doi.org/10.1016/j.jelechem.2007.06.007
Publikováno v:
Journal of Non-Crystalline Solids. 352:1962-1966
A new structure to circumvent the problem of light absorption in dead layers (i.e., highly doped emitters) is investigated: an inversion of the conventional a-S:H/c-Si solar cell hetero-structure, i.e., illumination of the backside, the c-Si part of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3784a0b8f52e895b4bbf24c3d07fcbb2
https://doi.org/10.1016/j.jnoncrysol.2006.01.034
https://doi.org/10.1016/j.jnoncrysol.2006.01.034
Publikováno v:
Superlattices and Microstructures. 39:376-380
Transparent, conductive SnO 2 (FTO) films and colloidal TiO 2 films deposited on these FTO films are investigated by means of contactless transient photoconductance measurements in the microwave frequency range (TRMC measurements). For the bare FTO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97534cbb33dc8fd3156e2df8bb27bea7
https://doi.org/10.1016/j.spmi.2005.08.062
https://doi.org/10.1016/j.spmi.2005.08.062
Autor:
Frank Wünsch, Patrick Portes, Jean-François Bocquet, Christophe Colbeau-Justin, Souhir Boujday
Publikováno v:
Solar Energy Materials and Solar Cells. 83:421-433
Nanosized TiO2 powders for photocatalytic degradation of organic pollutants are prepared by sol–gel method. The –Ti–O–Ti– network is synthesized by hydrolysis and controlled condensation of titanium isopropoxide Ti(O–iC3H7)4. The resultin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0279bb8996db1c9e1b8271fb409d04a
https://doi.org/10.1016/j.solmat.2004.02.035
https://doi.org/10.1016/j.solmat.2004.02.035
Publikováno v:
Phys. Chem. Chem. Phys.. 5:3984-3987
The change in reflected microwave power due to the photoinduced change of the sample's average conductivity is measured. The resulting microwave reflection signal is proportional to the change of the integral over the excess carrier profile in the se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6322bfe4cb67d1fe34f9833fa85aeebd
https://doi.org/10.1039/b304547c
https://doi.org/10.1039/b304547c
Publikováno v:
Journal of Applied Physics. 91:9147-9150
p-type Si wafers provided with silicon nitride films at the surface are investigated by contactless transient photoconductivity measurements. Comparing wafers of different resistivities and wafers at one side and at two sides provided with nitride fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dc1d961460fcd36445b8a851d8e3a78
https://doi.org/10.1063/1.1473214
https://doi.org/10.1063/1.1473214
Publikováno v:
Journal of Non-Crystalline Solids. :1198-1202
Amorphous silicon/crystalline silicon (c-Si) heterojunctions are studied by contactless transient photoconductivity measurements at the microwave frequency range. Excellent passivation of the n-type crystalline silicon (n c-Si) surface by n-type, hyd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3072c8405e4ad4bca01634448789994
https://doi.org/10.1016/s0022-3093(01)01139-5
https://doi.org/10.1016/s0022-3093(01)01139-5
Publikováno v:
Journal of Non-Crystalline Solids. :756-760
The optoelectronic properties of μc-Si films produced in different ways are studied by contactless transient photoconductivity measurements in the microwave frequency range. A strong charge carrier trapping is observed in most μc-Si films. The effe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d6a927190d78e2d3a42e8b44f2ba16f
https://doi.org/10.1016/s0022-3093(01)01111-5
https://doi.org/10.1016/s0022-3093(01)01111-5
Publikováno v:
Thin Solid Films. :449-452
The passivating influence of a-Si:H films on the c-Si surface is shown by contactless transient photoconductivity measurements in the microwave frequency range. A relation between the signal and the performance of a-Si:H/c-Si heterojunctions for sola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::474591343ae1efba02761fd53055c0ab
https://doi.org/10.1016/s0040-6090(01)01661-3
https://doi.org/10.1016/s0040-6090(01)01661-3