Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Frank Tutu"'
Autor:
Frank Tutu, Shawn M. Willis, Hazel E. Assender, Huiyun Liu, M. G. Peinado, Andrew A. R. Watt, James Andrew Robert Dimmock, Ian R. Sellers
Publikováno v:
Solar Energy Materials and Solar Cells. 102:142-147
Embedding quantum dots into the intrinsic layer of a p-i-n solar cell has been proposed as a method of increasing solar cell photocurrent by improving its long-wavelength light response. However, strong carrier localization and efficient radiative re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::978c0dae09a5109d3819c6f0c6bd80b3
https://doi.org/10.1016/j.solmat.2012.03.010
https://doi.org/10.1016/j.solmat.2012.03.010
Publikováno v:
Nature Photonics. 5:416-419
Growing a group III–V quantum dot laser directly on a group IV substrate could provide silicon photonics with a convenient new form of laser source for use in optoelectronic circuitry.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f86ff62ad060e6eceddce8659a7fc83
https://doi.org/10.1038/nphoton.2011.120
https://doi.org/10.1038/nphoton.2011.120
Publikováno v:
Renewable Energy and the Environment.
We have developed a variety of semiconductor nanostructures grown by molecular beam epitaxy. We show that the photovoltaic cells based on these semiconductor nanostructures are promising to achieve unprecedented power conversion efficiency.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ca947b48fb531dfae61ac8c0aeb6445
https://doi.org/10.1364/ose.2013.rm1d.1
https://doi.org/10.1364/ose.2013.rm1d.1
Autor:
Huiyun Liu, Frank Tutu, M. G. Peinado, Ting Wang, Andrew A. R. Watt, Shawn M. Willis, Ian R. Sellers, C. E. Pastore
Publikováno v:
JOURNAL OF APPLIED PHYSICS. 111(4)
The use of high-growth-temperature GaAs spacer layers is demonstrated to significantly enhance the performance of multilayer InAs/GaAs quantum-dot solar cells. Threading dislocations are observed for a 30-layer quantum-dot structure with GaAs spacer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47f851a985332224fd33632d1b0afed7
http://ora.ox.ac.uk/objects/uuid:ca50e1ad-13a3-4ceb-951b-dedc95bbca05
http://ora.ox.ac.uk/objects/uuid:ca50e1ad-13a3-4ceb-951b-dedc95bbca05
Publikováno v:
8th IEEE International Conference on Group IV Photonics.
The realization of semiconductor laser diodes and light-emitting diodes on Si substrates would permit the creation of complex optoelectronic circuits for the first time, enabling chip-to-chip and system-to-system optical communications. Direct epitax
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf7e93993acb1da2419292a36ebf8a40
https://doi.org/10.1109/group4.2011.6053776
https://doi.org/10.1109/group4.2011.6053776
Autor:
Rebecca Allison, Huiyun Liu, Mingchu Tang, Frank Tutu, P. Lam, N. Miyashita, J. Wilson, Yoshitaka Okada, Jiang Wu
Publikováno v:
Applied Physics Letters. 103:043901
We report enhanced solar cell performance using high-density InAs quantum dots. The high-density quantum dot was grown by antimony mediated molecular beam epitaxy. In-plane quantum dot density over 1 × 1011 cm−2 was achieved by applying a few mono
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19618e00d0e2b803dfd6e6226f3db6a5
https://doi.org/10.1063/1.4816503
https://doi.org/10.1063/1.4816503
Autor:
Yoshitaka Okada, K.-H. Lee, N. Miyashita, P. Lam, Jiang Wu, Frank Tutu, J. Wilson, Huiyun Liu, Nicholas J. Ekins-Daukes
Publikováno v:
Applied Physics Letters. 102:163907
We report the effects of the deposition of an AlAs cap layer (CL) over InAs quantum dots (QDs) on the performance of QD solar cells (QDSCs). The growth of AlAs CL over InAs QDs led to the elimination of the wetting layer absorption and hence the enha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd6f6a1ae131a39cd57a32f338655ad4
https://doi.org/10.1063/1.4803459
https://doi.org/10.1063/1.4803459
Autor:
Huiyun Liu, A. Lee, Q. Jiang, Richard A. Hogg, Frank Tutu, Kristian M. Groom, Alwyn J. Seeds, Ting Wang
Publikováno v:
Applied Physics Letters. 100:052113
The effect of the growth temperature of the GaAs nucleation layer on the properties of 1.3-μm InAs/GaAs quantum dots (QDs) monolithically grown on a Ge substrate is investigated by using transmission electron microscopy, etch pit density, and photol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c24e240a1e370a23bfff12812a5588f
https://doi.org/10.1063/1.3682314
https://doi.org/10.1063/1.3682314
Publikováno v:
Nature Photonics; Jul2011, Vol. 5 Issue 7, p416-419, 4p, 1 Color Photograph, 1 Diagram, 2 Graphs