Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Frank Sobel"'
Autor:
Denis Gindre, Licinio Rocha, Bouchta Sahraoui, Vincent Dumarcher, Céline Fiorini, Frank Sobel, Christine Denis, Jean-Michel Nunzi
Publikováno v:
Journal of Optics A: Pure and Applied Optics. 2:279-283
We report on measurements of laser emission from poly-methylmethacrylate and poly-vinyl carbazole polymer films doped with rhodamine-6G, DCM and coumarin laser dyes in an optically pumped distributed feedback scheme. We obtain tunability on a broad s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ce2adb868e4df7acce66f425fa709b9
https://doi.org/10.1088/1464-4258/2/4/306
https://doi.org/10.1088/1464-4258/2/4/306
Autor:
Frank Sobel, Jean-Michel Nunzi, C. Denis, Denis Gindre, Céline Fiorini-Debuisschert, K.P. Kretsch, Vincent Dumarcher, Licinio Rocha
Publikováno v:
Optical Materials. 27:199-201
We report on particular features of thin film distributed feedback (DFB) lasers. Devices are optically pumped using a Lloyd-mirror interferometer. For a given DFB grating period, the number of lasing modes is film thickness dependent. Spectral conten
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f172ce1a1c1f155263ad488a1dcdb72
https://doi.org/10.1016/j.optmat.2004.03.009
https://doi.org/10.1016/j.optmat.2004.03.009
Autor:
Ronny Walter, Wolfgang Biel, C. Laubis, Rainer Lebert, Christian Wies, Frank Sobel, Larissa Juschkin, Bernhard Jagle, Holger Seitz, O. Steffens, Frank Scholze
Publikováno v:
SPIE Proceedings.
AIXUV GmbH and partners have developed a high speed Reflectometer for EUV mask-blanks which is fully compliant with the SEMI-standard P38 for EUV-mask-blank metrology. The system has been installed in June 2004 at SCHOTT Lithotec AG It features high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4449af153b833309cd37dedc46bfa640
https://doi.org/10.1117/12.637341
https://doi.org/10.1117/12.637341
Autor:
Christian Wies, Ronny Walter, Nathalie Olschewski, Markus Renno, Günter Hess, Konrad Knapp, Holger Seitz, Thorsten Reichardt, Hans Becker, Thomas Leutbecher, Ute Buttgereit, Rainer Lebert, Frank Sobel
Publikováno v:
SPIE Proceedings.
Mask Blanks for EUV Lithography require a lot of new properties and features compared to standard Chrome-on-Glass blanks. Starting from completely new low thermal expansion substrate materials with significantly improved surface quality over multilay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45fccab4742ddc72dcef8e7a57ae63f8
https://doi.org/10.1117/12.637335
https://doi.org/10.1117/12.637335
Autor:
Markus Renno, Nathalie Olschewski, Thorsten Reichardt, Holger Seitz, Hans Becker, Rainer Lebert, Thomas Leutbecher, Ute Buttgereit, Konrad Knapp, Guenter Hess, Christian Wies, Frank Sobel, Ronny Walter
Publikováno v:
SPIE Proceedings.
Mask Blanks for EUV Lithography require a lot of new properties and features compared to standard Chrome-on-Glass mask blanks. SCHOTT Lithotec has introduced all relevant technology steps to manufacture EUV mask blanks. Starting from completely new l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17d465db2bf8c471bc38c83f525880fd
https://doi.org/10.1117/12.600538
https://doi.org/10.1117/12.600538
Autor:
Corinna Koepernik, Christian Holfeld, Florian Letzkus, Joerg Butschke, Josef Mathuni, Frank Sobel, Lutz Aschke
Publikováno v:
SPIE Proceedings.
Extreme Ultraviolet Lithography (EUVL) is the favourite next generation lithography candidate for IC device manufacturing with feature sizes beyond 32nm. The SiO2 buffer dry etching is a crucial step in the manufacture of the EUV mask due to stringen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8067b3ff4fc2f887fade59aedb18930
https://doi.org/10.1117/12.569265
https://doi.org/10.1117/12.569265
Autor:
Joerg Butschke, Corinna Koepernik, Markus Renno, Torsten Reichardt, Lutz Aschke, Holger Seitz, Florian Letzkus, Nathalie Olschewski, Konrad Knapp, Ute Buttgereit, Frank Sobel, Guenter Hess, Hans Willy Becker
Publikováno v:
SPIE Proceedings.
EUV Lithography requires high end quality defect free layers from the backside coating to the absorber stack. Low thermal expansion materials (LTEM) substrates with super flat surfaces are already available with low defect backside coating for E-Chuc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0835ee1a45fe8d961ef7f9cdbc8e4b5b
https://doi.org/10.1117/12.568787
https://doi.org/10.1117/12.568787
Autor:
Frank Schmidt, Hans Willy Becker, Holger Seitz, Konrad Knapp, Pascal Schley, Guenter Hess, Frank Sobel, Ute Buttgereit, Nathalie Olschewski, Markus Renno
Publikováno v:
SPIE Proceedings.
Schott's already commercially available two layer Ta/SiO2 phase shift system can be tuned from 6% up to 30% transmission for 157, 193 and 248 nm lithography wavelengths. Thus one film patterning process provides a wide product range. Dry etch process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f70b9e5e1a704414b9733d7f63b6f7f
https://doi.org/10.1117/12.570217
https://doi.org/10.1117/12.570217
Autor:
Lutz Aschke, Hans W. Becker, Falk Friemel, Thomas Leutbecher, Nathalie Olschewski, Markus Renno, Frauke Rueggeberg, Mario Schiffler, Frank Schmidt, Frank Sobel, Kurt Walter, Guenter Hess, Frank Lenzen, Konrad Knapp, Jochen Alkemper, Hrabanus Hack, Klaus Megges, Ina Mitra, Rolf Mueller, Uwe Nolte, Joerg Schumacher, Wolfgang Pannhorst
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97d559e58b517a8501647a2793a73bd8
https://doi.org/10.1117/12.568007
https://doi.org/10.1117/12.568007
Autor:
Lutz Aschke, Roxann L. Engelstad, Edward G. Lovell, Frauke Rueggeberg, Frank Sobel, Andrew R. Mikkelson
Publikováno v:
SPIE Proceedings.
The International Technology Roadmap for Semiconductors for Extreme Ultraviolet Lithography (EUVL) places strict requirements on the quality and flatness of the substrate and patterned mask. The SEMI EUVL Mask Substrate Standard (SEMI P37) specifies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83dc2ca3d53e225d8276b50cb4a904c5
https://doi.org/10.1117/12.568014
https://doi.org/10.1117/12.568014