Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Frank Sinclair"'
Autor:
J.C. Olson, Alex Eidukonis, Stan Todorov, Dennis Rodier, Frank Sinclair, Thirumal Thanigaivelan
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
The continued advance of semiconductor technology, including the emergence of 3D device architectures, demands ever-increasing precision of dose and angle control in ion implantation. The Varian Semiconductor Equipment business unit of Applied Materi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a76eb7d71c010e3defc5164cee14c2bf
https://doi.org/10.1109/iit.2014.6940037
https://doi.org/10.1109/iit.2014.6940037
Autor:
Svetlana Radovanov, Antonella Cucchetti, Chris Campbell, Peter L. Kellerman, S. Falk, Frank Sinclair
Publikováno v:
AIP Conference Proceedings.
Recent developments in device architecture and the continuing search for tighter process control have driven the requirement for no energy contamination, high accuracy dose control, more precise angle control and peak dose rate control. The new high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18978b886912706fb331144b1f2c10d5
https://doi.org/10.1063/1.4766547
https://doi.org/10.1063/1.4766547
Autor:
Shengwu Chang, Venkataramana Chavva, Frank Sinclair, Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki
Publikováno v:
AIP Conference Proceedings.
The deliberate use of channeling to control depth profiles has come of age in the application to CMOS imaging sensor device manufacturing. In order to enable the true zero implant application on VIISta3000, we have optimized beam incidence angle cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11c34fd4440c159dc7488907e864fdff
https://doi.org/10.1063/1.3548419
https://doi.org/10.1063/1.3548419
Autor:
Frank Sinclair
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:482-487
An understanding of the geometrical properties of the implantation process is essential for the optimization of dose control algorithms and for control of channeling effects. The EATON mechanically scanned implanters use a closed loop dose measuremen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17454860fda1cb30da9844600c4f2277
https://doi.org/10.1016/0168-583x(91)96217-9
https://doi.org/10.1016/0168-583x(91)96217-9
Autor:
J. O'Brien, A. Dart, P. Boisseau, K. Whaley, H.F. Glavish, N. Meyyappan, D. Balek, B. Libby, Frank Sinclair, C. Hayden, E. McIntyre, L. Kaminski, A.S. Denholm
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:473-477
The Eaton NV1002 is a high energy ion implanter with beam current capability greater than 1 mA. Acceleration to energies between 80 and 2000 keV is achieved with a variable phase linear accelerator (linac). The first production NV1002 is being tested
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a688e4e7275b30d69692adbfbb860528
https://doi.org/10.1016/0168-583x(91)96215-7
https://doi.org/10.1016/0168-583x(91)96215-7
Autor:
Frank Sinclair
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:115-123
The use of thinner gate oxides in ULSI, susceptible to catastrophic breakdown at lower voltages, presents an increasingly difficult problem for ion implanter manufacturers. The center of a high current ion beam can be modeled as a voltage source whos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e88eead4205014ac08bf633a319014d
https://doi.org/10.1016/0168-583x(91)96147-d
https://doi.org/10.1016/0168-583x(91)96147-d
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:211-215
We present data on beam potential measurements in a high-current implanter. The beam potential measurements were made using a test structure on a silicon wafer with a time-resolved in situ data gathering system in the mechanically scanned implanter.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7985b58848ee3e38c7d88df199610dcb
https://doi.org/10.1016/0168-583x(91)96164-g
https://doi.org/10.1016/0168-583x(91)96164-g
Autor:
Dale C. Jacobson, T. N. Horsky, Hilton F. Glavish, Nobuo Nagai, M. Naito, Frank Sinclair, N. Hamamoto
Publikováno v:
AIP Conference Proceedings.
We describe the features of a beam line and ion source system which is being developed for a commercial ion implanter capable of meeting the challenges of high dose, low energy implants needed to fabricate integrated circuits with critical dimensions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff089336872b38cb0297f7da9f74ff33
https://doi.org/10.1063/1.2401486
https://doi.org/10.1063/1.2401486
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
Ion implantation into photoresist wafers gives rise to large quantities of photoresist outgassing. The purpose of this undertaking was to determine the time dependence of the outgassing rate. Photoresist wafers begin outgassing when implantation begi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f7c3f76dcb53274c03cfad6003a0a80
https://doi.org/10.1109/iit.1999.812164
https://doi.org/10.1109/iit.1999.812164
Autor:
Frank Sinclair, N. DeMario, W. Reed, J. Burgess, P. Ring, S. Hirokawa, J. Castantini, P. Splinter, D. Shen
Publikováno v:
Proceedings of 11th International Conference on Ion Implantation Technology.
Two dimensional beam current density profiling in production ion implanters is a tool which can be used to achieve control over process effects such as charging, implant temperature, uniformity, contamination and defect structures that are all increa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c128c60440bc01755150c04025be3d32
https://doi.org/10.1109/iit.1996.586259
https://doi.org/10.1109/iit.1996.586259