Zobrazeno 1 - 10
of 157
pro vyhledávání: '"Frank Schwierz"'
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 1, Pp n/a-n/a (2024)
Abstract Two‐dimensional layered transition metal dichalcogenides (TMDCs) are promising memristive materials for neuromorphic computing systems. Despite extensive experimental work, the underlying switching mechanisms are still not understood, impe
Externí odkaz:
https://doaj.org/article/43a757961e344e4088e7c7a8d1286e7d
Autor:
Frank Schwierz, Martin Ziegler
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 443-451 (2022)
The present paper guides the reader through six decades of research on 2D materials, thereby putting special focus on the use of these materials for electronic devices. It is shown that after a slow start and only little activity over many years, sin
Externí odkaz:
https://doaj.org/article/7479aee4160b459f9af244eaf3da2ff5
Autor:
Yury Yu. Illarionov, Theresia Knobloch, Markus Jech, Mario Lanza, Deji Akinwande, Mikhail I. Vexler, Thomas Mueller, Max C. Lemme, Gianluca Fiori, Frank Schwierz, Tibor Grasser
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-15 (2020)
The lack of scalable, high-quality insulators is a major problem hindering the progress on electronic devices built from 2D materials. Here, the authors review the current state-of-the-art and the future prospects of suitable insulators for 2D techno
Externí odkaz:
https://doaj.org/article/a3906599e6e3493a9e85dbcbc3c20750
Autor:
Erdin Ture, Peter Bruckner, Birte-Julia Godejohann, Rolf Aidam, Mohamed Alsharef, Ralf Granzner, Frank Schwierz, Rudiger Quay, Oliver Ambacher
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 1, Pp 1-6 (2016)
Through implementation of the 3-D tri-gate topology, GaN-based high-electron mobility transistors (HEMTs) have been fabricated and high-frequency performances as well as the short-channel effects are investigated. The designed tri-gate transistors ar
Externí odkaz:
https://doaj.org/article/0bfbf3a76e014c1997607dcc0c39d50d
Autor:
Juin J. Liou, Frank Schwierz
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 1 (2004)
Most applications for radio frequency/microwave (thereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has been changed drastically due to the explosive growth of the markets for civil wireless communication
Externí odkaz:
https://doaj.org/article/058c3ff5a77241b79eeac0be34f03592
Autor:
Pengfei Luo, Chang Liu, Jun Lin, Xinpei Duan, Wujun Zhang, Chao Ma, Yawei Lv, Xuming Zou, Yuan Liu, Frank Schwierz, Wenjing Qin, Lei Liao, Jun He, Xingqiang Liu
Publikováno v:
Nature Electronics. 5:849-858
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e94445814e9d1d6a8d48350efb1032d2
https://doi.org/10.1038/s41928-022-00877-w
https://doi.org/10.1038/s41928-022-00877-w
Autor:
Frank Schwierz, Alexander N. Smirnov, I. A. Eliseyev, Sebastian Thiele, Heiko O. Jacobs, Jörg Pezoldt, Valery Yu. Davydov
Publikováno v:
Materials Today: Proceedings. 53:281-284
In this work, we experimentally investigate the effects of electric bias on the degradation of few-layer MoS2 back-gated field-effect transistors in ambient air. The devices were fabricated using mechanically exfoliated MoS2 flakes, which were transf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0a5f0cdec1a790c041026aa95ac142b
https://doi.org/10.1016/j.matpr.2021.05.298
https://doi.org/10.1016/j.matpr.2021.05.298
Publikováno v:
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ab26c3604f3f67f4c4d821c4022d456
https://doi.org/10.1109/icsict55466.2022.9963340
https://doi.org/10.1109/icsict55466.2022.9963340
Publikováno v:
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::953e802a961961703b224490277ca042
https://doi.org/10.1109/icsict55466.2022.9963350
https://doi.org/10.1109/icsict55466.2022.9963350
Publikováno v:
2022 45th International Spring Seminar on Electronics Technology (ISSE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4706b825478f127dcb1a4eeaa36d86b
https://doi.org/10.1109/isse54558.2022.9812829
https://doi.org/10.1109/isse54558.2022.9812829