Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Frank Pennartz"'
Autor:
Stefan Haas, Friedhelm Finger, Hassan Ali Bosan, Maurice Nuys, Daniel Amkreutz, Nelli Hambach, Wolfhard Beyer, Uwe Breuer, Frank Pennartz
Publikováno v:
Physica status solidi / A 218(9), 2000435-(2021). doi:10.1002/pssa.202000435
The thermal stability of thick amp; 8776;4 amp; 8201; amp; 956;m plasma grown hydrogenated amorphous silicon a Si H layers on glass upon application of a rather rapid annealing step is investigated. Such films are of interest as precursor layers for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::621c155f2448b9ed8fbee9dcd7f97436
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=105232
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=105232
Publikováno v:
Thin solid films 714, 138353-(2020). doi:10.1016/j.tsf.2020.138353
For application as precursor layers for silicon solar cells fabricated by laser liquid phase crystallization, thick amorphous silicon films on glass are of interest. However, for hydrogenated amorphous silicon (a-Si:H) precursor layers containing abo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5955d1985922ce3926135ef8eaba9db4
https://juser.fz-juelich.de/record/889309
https://juser.fz-juelich.de/record/889309
Autor:
J. Bergmann, Uwe Breuer, Friedhelm Finger, T. Schmidt, U. Zastrow, Norbert H. Nickel, Wolfhard Beyer, Andreas Lambertz, Tsvetelina Merdzhanova, Frank Pennartz
Publikováno v:
MRS Proceedings. 1770:1-6
Laser and oven annealing effects on hydrogen concentration, hydrogen diffusion and material microstructure in hydrogenated amorphous silicon films deposited on crystalline silicon substrates are compared. For laser annealing, a 6 W green (532 nm) con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f83287f2039fec01aa9cc678de9ab973
https://doi.org/10.1557/opl.2015.431
https://doi.org/10.1557/opl.2015.431
Autor:
Manuel Pomaska, Uwe Rau, Shenghao Li, Jan Hoß, Kaining Ding, Frank Pennartz, Maurice Nuys, Johannes Wolff, Andreas Schmalen, Friedhelm Finger, Jan Lossen, Ruijiang Hong
Publikováno v:
Applied physics letters 114(15), 153901 (2019). doi:10.1063/1.5089650
Hot-wire chemical vapor deposition (HWCVD) was utilized to develop a fast and high quality a-Si:H thin film fabrication method for poly-Si/SiOx carrier selective passivating contacts targeting at n-type passivated emitter rear totally diffused crysta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fcdbf37a7935ac5befac97b53b4ff0eb
https://doi.org/10.1063/1.5089650
https://doi.org/10.1063/1.5089650
Publikováno v:
MRS Proceedings. 1536:175-180
An important property of thin film silicon and related materials is the microstructure which may involve the presence of interconnected and isolated voids. We report on effusion measurements of implanted helium (He) to detect such voids. Several seri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1e04ff87b76843502e4e3fc20048d75
https://doi.org/10.1557/opl.2013.746
https://doi.org/10.1557/opl.2013.746
Publikováno v:
MRS Proceedings. 1426:341-346
Effusion measurements of hydrogen and implanted helium are reported for (undoped) amorphous and crystalline Si:H and related materials. Effusion of helium observed at temperatures > 600°C is attributed to isolated voids present in the material from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::661c8a55f070c1dd0773668e0a448a86
https://doi.org/10.1557/opl.2012.1399
https://doi.org/10.1557/opl.2012.1399
Publikováno v:
physica status solidi c. 7:557-560
The growth of highly conductive boron doped microcrystalline silicon by the hot wire method was studied. Various series of films were deposited to investigate the influence of the deposition parameters on conductivity, crystallinity and (void-related
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da833b6b30ca0c47c1cc330000df94ea
https://doi.org/10.1002/pssc.200982848
https://doi.org/10.1002/pssc.200982848
Autor:
W. Hilgers, D. Lennartz, F.C. Maier, Norbert H. Nickel, P. Prunici, Wolfhard Beyer, Frank Pennartz
Publikováno v:
MRS Proceedings. 1666
Laser heating and annealing of hydrogenated amorphous silicon (a-Si:H) films is of interest for improved material properties. Due to the variety of possible laser treatments with regard to wavelength, pulse duration, scan time etc., the definition of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2f5b4c83d845b354b9bdf41909f3f5e
https://doi.org/10.1557/opl.2014.667
https://doi.org/10.1557/opl.2014.667
Autor:
Stefan Muthmann, Reinhard Carius, Frank Pennartz, U. Zastrow, Kaining Ding, Florian Köhler, Manuel Pomaska, Friedhelm Finger, Jan Mock, Oleksandr Astakhov
Publikováno v:
Journal of applied physics 119(17), 175303 (2016). doi:10.1063/1.4948479
Microcrystalline silicon carbide (μc-SiC:H) deposited by hot wire chemical vapor deposition (HWCVD) and plasma-enhanced chemical vapor deposition (PECVD) provide advantageous opto-electronic properties, making it attractive as a window layer materia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e814be8a6832e219a3d2e1633bcc3b9e
https://doi.org/10.1063/1.4948479
https://doi.org/10.1063/1.4948479
Publikováno v:
MRS Proceedings. 1245
The characterization of void-related microstructure in amorphous and microcrystalline Ge:H films is reported. Various methods are applied including effusion measurements of hydrogen and of implanted helium and neon, measurements of the infrared absor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::284bbf629f09a6a196a5e409af6bbaf7
https://doi.org/10.1557/proc-1245-a04-04
https://doi.org/10.1557/proc-1245-a04-04