Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Frank Lipski"'
Autor:
Ferdinand Scholz, Klaus Thonke, Dominik Heinz, Tobias Meisch, Josef Zweck, Robert A. R. Leute, Johannes Thalmair, Frank Lipski, Junjun Wang
Publikováno v:
Journal of Crystal Growth. 370:101-104
We present LED structures with embedded semipolar { 10 1 ¯ 1 } quantum wells based on 2-inch c -plane GaN templates grown on c -plane sapphire substrates. Using selective area epitaxy, we achieved periodic GaN stripe structures with triangular cross
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47b033b3ed110c11bcb581a5c1b01da6
https://doi.org/10.1016/j.jcrysgro.2012.09.060
https://doi.org/10.1016/j.jcrysgro.2012.09.060
Publikováno v:
Journal of Crystal Growth. 352:235-238
Free-standing GaN wafers grown by hydride vapor phase epitaxy are typically concavely bowed. In situ and ex situ curvature measurements indicate that some strain developing at the very beginning of the epitaxial process or even in the template grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83ceba728ff6351b50663f63b880968c
https://doi.org/10.1016/j.jcrysgro.2011.10.021
https://doi.org/10.1016/j.jcrysgro.2011.10.021
Autor:
Stephan Schwaiger, Sebastian Metzner, C. Karbaum, Clemens Wächter, Michael Jetter, Frank Bertram, Ferdinand Scholz, Frank Lipski, Thomas Hempel, Peter Michler, Thomas Wunderer, Jürgen Christen
Publikováno v:
physica status solidi (b). 248:632-637
Semipolar InGaN/GaN single quantum wells (SQWs) grown on {1122} planes of an inverted pyramid surface and {1011} facets of single self assembled pyramids have been studied by spatially, spectrally, and time-resolved cathodoluminescence (CL) microscop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d520dd5050b9aebe9f4cc86ef51a54a3
https://doi.org/10.1002/pssb.201046500
https://doi.org/10.1002/pssb.201046500
Autor:
Benjamin Neuschl, Kamran Forghani, Ute Kaiser, Thorsten Passow, Frank Lipski, J. Hertkorn, O. Klein, Klaus Thonke, Martin Klein, Robert A. R. Leute, Stephan Schwaiger, Martin Feneberg, Richard Gutt, Ferdinand Scholz
Publikováno v:
Journal of Crystal Growth. 315:216-219
We have investigated the optimization of Al 0.2 Ga 0.8 N layers directly grown on sapphire by metalorganic vapor phase epitaxy (MOVPE). The quality of the AlGaN epilayers was improved by in situ nano-masking employing ultra-thin SiN x interlayers. Tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fcb1af1722f5e211d625816951c7513
https://doi.org/10.1016/j.jcrysgro.2010.08.044
https://doi.org/10.1016/j.jcrysgro.2010.08.044
Autor:
Ulrich T. Schwarz, Ferdinand Scholz, Klaus Thonke, Clemens Vierheilig, Andreas Hangleiter, A. D. Dräger, Andrey Chuvilin, G. J. Beirne, Martin Feneberg, L. Schade, Michael Jetter, Junjun Wang, Peter Michler, Ute Kaiser, Thomas Wunderer, Sebastian Metzner, Robert A. R. Leute, Frank Bertram, Frank Lipski, Jürgen Christen, Stephan Schwaiger
Publikováno v:
physica status solidi (b). 248:549-560
Selective-area epitaxy is used to form three-dimensional (3D) GaN structures providing semipolar crystal facets. On full 2-in. sapphire wafers we demonstrate the realization of excellent semipolar material quality by introducing inverse GaN pyramids.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6114a7b6a4df15a5cd4b5b778bcd1d40
https://doi.org/10.1002/pssb.201046352
https://doi.org/10.1002/pssb.201046352
Autor:
Thomas Wunderer, Ferdinand Scholz, Alois Krost, Jürgen Bläsing, Frank Lipski, Sebastian Metzner, Frank Bertram, Johannes Thalmair, Ilona Argut, Jürgen Christen, M. Wieneke, Stephan Schwaiger, Josef Zweck
Publikováno v:
physica status solidi (b). 248:588-593
Semipolar (1122) oriented GaN has been grown on a prestructured r-plane sapphire substrate. By using silicon doped marker layers (MLs) we have been able to monitor the growth evolution of the stripes until coalescence. With that technique we correlat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53f8b75f7554631bb35f9d47960aeb06
https://doi.org/10.1002/pssb.201046336
https://doi.org/10.1002/pssb.201046336
Publikováno v:
physica status solidi c. 7:2069-2072
We have investigated the growth of nonpolar GaN templates by hydride vapor phase epitaxy (HVPE). This includes a systematic study of misoriented r-plane sapphire wafers with a miscut angle up to ±1° towards the c-axis of the crystal as starting sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96396065dbd36032711d854ec9ae6c23
https://doi.org/10.1002/pssc.200983514
https://doi.org/10.1002/pssc.200983514
Autor:
Andrey Chuvilin, Junjun Wang, A. E. Yunovich, S. S. Shirokov, Sebastian Metzner, Frank Bertram, Ute Kaiser, Frank Lipski, Stephan Schwaiger, Thomas Wunderer, Jürgen Christen, Ferdinand Scholz
Publikováno v:
physica status solidi c. 7:2140-2143
Excellent semipolar GaN material quality can be obtained by growing inverse GaN pyramids on full 2 inch c-plane sapphire when combining the advantages of defect reduction via FACELO and selective area growth for faceted surfaces. The nearly defect fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ffa952a28f7d9fb0341795c5f28e13a
https://doi.org/10.1002/pssc.200983445
https://doi.org/10.1002/pssc.200983445
Publikováno v:
physica status solidi (a). 207:1287-1291
Using a dielectric mask, structured by optical lithography, freestanding 2"-GaN wafers were prepared by hydride vapour phase epitaxy (HVPE) and self-separation during cooldown. The mask was deposited on a GaN template grown on sapphire by metal organ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d51f16ef3d4d08d3d483f2b952f2f48f
https://doi.org/10.1002/pssa.200983517
https://doi.org/10.1002/pssa.200983517
Autor:
Rolf Sauer, Thomas Wunderer, Ferdinand Scholz, M. Dürrschnabel, Michael Lorenz, Yong Xie, A. Reiser, Holger Hochmuth, Klaus Thonke, Martin Feneberg, S.B. Thapa, Dagmar Gerthsen, L. D. Yao, Frank Lipski, J. Hertkorn, Marius Grundmann
Publikováno v:
Journal of Crystal Growth. 310:5139-5142
A multi-layer growth process is established for the growth of GaN on ZnO films and implemented to the growth of GaN around ZnO nanopillars using metalorganic vapor phase epitaxy (MOVPE). We have successfully grown GaN/ZnO coaxial nanopillar heterostr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea5ef3f8cc25efbb017da5f5df59d4f5
https://doi.org/10.1016/j.jcrysgro.2008.07.009
https://doi.org/10.1016/j.jcrysgro.2008.07.009