Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Frank L. Pasquale"'
Autor:
Aparna Pilli, Natasha Chugh, Jessica Jones, Jeffry A. Kelber, Jincheng Du, Veronica Lee, Frank L. Pasquale, Adrien Lavoie
Publikováno v:
The Journal of Physical Chemistry C. 124:25846-25858
Oxygen plasma is crucial to many atomic layer deposition (ALD) processes, and O(3P) radicals play a significant role in terms of reactivity and surface modification. In situ X-ray photoelectron spe...
Publikováno v:
Molecular Simulation. 42:39-46
First-principles density functional theory calculations have been used to study the relative stability and analyse the chemical bonding of novel cross-linked carborane polymers. Atomic charges with several population analysis methods based on fully r
Autor:
Peter A. Dowben, Bin Dong, Haseeb Kazi, Frank L. Pasquale, Raymond P. Welch, Yuan Cao, Xumin Chen, Juan A. Colón Santana, Jeffry A. Kelber, Mike Street, Christian Binek, Axel Enders, Shi Cao
Publikováno v:
Materials Chemistry and Physics. :113-123
The growth and surface structures of ultrathin chromia (Cr 2 O 3 ) films on Cu(111), Co(0001), and on thin graphene/graphitic carbon films on Co(0001) have been investigated, and compared to epitaxial chromia films grown on Al 2 O 3 (0001). On metall
Autor:
Yuan Cao, Peter A. Dowben, Bin Dong, Haseeb Kazi, Takashi Komesu, Jack L Rodenburg, M. Sky Driver, Frank L. Pasquale, Jeffry A. Kelber, Iori Tanabe
Publikováno v:
MRS Proceedings. 1729:79-83
Ultra thin films of chromia (Cr2O3), less than 3 nm thick, grown epitaxial on α-Al2O3 (sapphire), and are thus compressively strained in-plane. The resulting films show evidence of some magnetic ordering above the Néel temperature of chromia (307 K
Autor:
Frank L. Pasquale, Jeffry A. Kelber, Natasha Chugh, Jessica Jones, Aparna Pilli, Adrien Lavoie
Publikováno v:
Journal of Vacuum Science & Technology A. 37:041505
The deposition of boron oxide (B2O3) films on Si and SiO2 substrates by atomic layer deposition (ALD) is of growing interest in microelectronics for shallow doping of high aspect ratio transistor structures. B2O3, however, forms volatile boric acid (
The number of nonreligious people has increased dramatically over the past several decades, yet scholarship on the nonreligious is severely lacking. In response to this critical gap in knowledge, The Nonreligious provides a comprehensive summation an
Autor:
A. Sokolov, Peter A. Dowben, Frank L. Pasquale, Elena Echeverria, Jeffry A. Kelber, Robinson James, Le Zhang, Juan A. Colón Santana
Publikováno v:
Materials Letters. 110:20-23
We have found large room temperature magneto-resistance in boron carbides fabricated via electron-induced cross-linking of icosahedral closo -1,2-dicarbadodecaborane ( ortho -carborane; 1,2-B 10 C 2 H 12 ) in the presence of the aromatic compound 1,4
Publikováno v:
ECS Transactions. 53:147-157
Systematic studies of plasma activated-ALD SiO2 films have been done to investigate the formation and origin of charge defects in the oxide films, and the effects of post anneal treatments. Capacitance-voltage (C-V) measurements were done to extract
Publikováno v:
The Nonreligious: Understanding Secular People and Societies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfab91e46da27305dbdf4ea58f502538
https://doi.org/10.1093/acprof:oso/9780199924950.003.0011
https://doi.org/10.1093/acprof:oso/9780199924950.003.0011
Publikováno v:
The Nonreligious: Understanding Secular People and Societies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::062c4a95c370afdee7468be7f24a5c27
https://doi.org/10.1093/acprof:oso/9780199924950.003.0006
https://doi.org/10.1093/acprof:oso/9780199924950.003.0006