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pro vyhledávání: '"Frank John Procyk"'
Autor:
Ronald Paul Cenker, William Richard Huber, Frank John Procyk, J.B. Petrizzi, G.M. Trout, Donald Gordon Clemons
Publikováno v:
IEEE Transactions on Electron Devices. 26:853-860
A 64K dynamic MOS RAM with features and performance fully compatible with current 16K RAM's has been designed and characterized. The memory cell is a one-transistor-one-capacitor structure, standard except for a polysilicon bit line. A dual-32K archi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbcb898dea7f4f6a847925fb51b7a093
https://doi.org/10.1109/t-ed.1979.19509
https://doi.org/10.1109/t-ed.1979.19509
