Zobrazeno 1 - 10
of 394
pro vyhledávání: '"Frank J. Crowne"'
Autor:
Robert A. Burke, Albert V. Davydov, Frank J. Crowne, Sarah M. Eichfeld, Terrance O'Regan, Kehao Zhang, Dmitry Ruzmetov, Tony Ivanov, Joshua A. Robinson, Gheorghe Stan, A. Glen Birdwell, Ganesh R. Bhimanapati, Pankaj B. Shah, Berc Kalanyan
Publikováno v:
ACS Nano. 10:3580-3588
When designing semiconductor heterostructures, it is expected that epitaxial alignment will facilitate low-defect interfaces and efficient vertical transport. Here, we report lattice-matched epitaxial growth of molybdenum disulfide (MoS2) directly on
Autor:
A. Glen Birdwell, Edward F. C. Byrd, Dmitry Ruzmetov, Terrance O'Regan, DeCarlos E. Taylor, Mahesh R. Neupane, Tony Ivanov, Pankaj B. Shah, Barbara Nichols, Frank J. Crowne, Matthew L. Chin, Robert A. Burke
Publikováno v:
DRC
In recent years, large investments into the research of semiconducting two-dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDs) have elucidated interesting device related physical phenomena such as valleytronics [1]
Publikováno v:
Ferroelectrics. 473:13-23
Ba(Ga,Ta)0.05Ti0.90O3, a B-site dipole-like substituted material is investigated for structural phase transitions over the temperature range 30 to 900°C using x-ray diffraction. Rietveld refinement of the data suggests the material to be Pmm (cubic)
Publikováno v:
Solid-State Electronics. 91:87-90
Thermal and hysteresis effects are studied for the first time in Al 2 O 3 top-gated, CVD grown monolayer MoS 2 field effect transistors (FETs). Stressing with an applied bias reversed the hysteresis rotation in the high temperature I ds – V gs tran
Publikováno v:
Integrated Ferroelectrics. 148:17-26
The microwave ceramic Ba(Y,Sb)0.05Ti0.90O3, based upon random B-site dipole-like substitutions is structurally and electrically characterized over the temperature range −55°C to 120°C. X-ray diffraction information coupled together with scanning
Publikováno v:
Solid-State Electronics. 78:102-108
In the Dyakonov–Shur terahertz detector the conduction channel of a heterostructure High Electron Mobility Transistor (HEMT) is used as a plasma wave resonator for density oscillations in electron gas. Nonlinearities in the plasma wave propagation
Publikováno v:
International Journal of High Speed Electronics and Systems. 17:789-800
In this paper we explore the design of microwave-based structures that can enhance the interaction of electromagnetic fields with cold-atom ensembles, leading to novel sensing modalities based on the quantum-mechanical behavior of these systems. In p
Publikováno v:
Integrated Ferroelectrics. 71:161-171
The dc and low-frequency dynamic responses of the complex BST-based solid solutions BaxSr1−x (B+B−)y Ti1 − 2y O3, where B+ and B− are charge-compensating B-site donors and acceptors (e.g., Sc+3 and Ta+5) replacing Ti atoms, can be treated at
Publikováno v:
Integrated Ferroelectrics. 71:193-205
A transmission-line model is used to obtain the reflection coefficient of a tapered transition from ferroelectric-slab waveguide to microstrip, both numerically and in terms of Whittaker functions. Such transitions are required due to the low impedan
Publikováno v:
Integrated Ferroelectrics. 56:1065-1073
A slab geometry, in which ferroelectric is inserted between two “cladding” layers with a microstrip electrode placed on top, is proposed as a way to integrate the properties of ferroelectric materials into microwave components. This structure dis