Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Autor: Didem Dede, Frank Glas, Valerio Piazza, Nicholas Morgan, Martin Friedl, Lucas Güniat, Elif Nur Dayi, Akshay Balgarkashi, Vladimir G Dubrovskii, Anna Fontcuberta i Morral

Publikováno v: Nanotechnology. 33(48)

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and sel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af96e581d525e679eb38b7e985674278
https://pubmed.ncbi.nlm.nih.gov/35952545

Dynamique de consommation de la gouttelette en croissance VLS de nanofils III-V

Autor: Andrea Cattoni, Frank Glas, Fabrice Oehler, Anton Pishchagin, Gilles Patriarche, Jean-Christophe Harmand

Publikováno v: Crystal Growth & Design
Crystal Growth & Design, American Chemical Society, 2021, ⟨10.1021/acs.cgd.1c00504⟩
Crystal Growth & Design, 2021, ⟨10.1021/acs.cgd.1c00504⟩

International audience; We study experimentally and theoretically the consumption of the apical gallium droplet that mediates the self-catalyzed vapor-liquid-solid growth of GaP nanowires. Consumption is achieved after growth by providing only phosph

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8dacf9a3470980d2bdd588f8fa7d6ca8
https://hal.archives-ouvertes.fr/hal-03293564/file/GaP_Revised_HAL.pdf

Stopping effect in growth kinetics of III-V nanowires

Autor: Frank Glas, D. P. Wilson, Vladimir G. Dubrovskii, Ray R. LaPierre

Publikováno v: 2020 International Conference Laser Optics (ICLO).

We present a model for the growth kinetics of III-V nanowires which describes the time evolution of the monolayer coverage and group V concentration in the droplet. Special emphasis is put on the stopping effect at very low group V contents, where 2D

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::561c5ad4b347ebfd110424efc4707704
https://doi.org/10.1109/iclo48556.2020.9285606

Full characterization and modeling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure

Autor: Moïra Hocevar, Petr Stepanov, Frank Glas, D. V. Beznasyuk, Jean-Luc Rouvière, Julien Claudon, Marcel A. Verheijen

Publikováno v: Physical Review Materials
Physical Review Materials, American Physical Society, 2020, 4 (7), pp.074607. ⟨10.1103/PhysRevMaterials.4.074607⟩
Physical Review Materials, 2020, 4 (7), pp.074607. ⟨10.1103/PhysRevMaterials.4.074607⟩
Physical Review Materials, 4(7):074607. American Physical Society

Controlling the strain level in nanowire heterostructures is critical for obtaining coherent interfaces of high crystalline quality and for the setting of functional properties such as photon emission, carrier mobility or piezoelectricity. In a nanow

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9af898c8fe346a9eabb5b50c1fd7aab9
https://doi.org/10.1103/physrevmaterials.4.074607

Microstructure of GaAs thin films grown on glass using Ge seed layers fabricated by aluminium induced crystallization

Autor: D. Pelati, Laurent Travers, Frank Glas, Fabrice Oehler, O. Mauguin, François Brisset, Ludovic Largeau, Gilles Patriarche

Publikováno v: Thin Solid Films
Thin Solid Films, Elsevier, 2020, 694, pp.137737. ⟨10.1016/j.tsf.2019.137737⟩

International audience; We perform the growth of GaAs epilayers by molecular beam epitaxy (MBE) on Ge pseudo-substrates obtained by the Aluminium Induced Crystallisation (AIC) of thin amorphous Ge layers deposited on silica. Despite the apparent unif

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b8d8b0d543a30ff3ded81bdd63a6d5c4
https://hal.archives-ouvertes.fr/hal-02404458/file/Sub_grain_v3.pdf