Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Frank Duray"'
Towards 22 nm: fast and effective intra-field monitoring and optimization of process windows and CDU
Autor:
Christopher S. Ngai, Orion Mouraille, Christopher Dennis Bencher, Kfir Dotan, Michael Ben Yishay, Amir Sagiv, Yaron Cohen, Evert Mos, Huixiong Dai, Shmoolik Mangan, Roel Knops, Frank Duray, Alexander Kremer, Ilan Englard, Ingrid Minnaert-Janssen, Jo Finders
Publikováno v:
SPIE Proceedings.
ITRS lithography's stringent specifications for the 22nm node are a major challenge for the semiconductor industry. With the EUV point insertion at 16nm node, ArF lithography is expected to reach its fundamental limits. The prevailing view of holisti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ff0681e2d45c833bc3c4709805f4507
https://doi.org/10.1117/12.881657
https://doi.org/10.1117/12.881657
Autor:
Dror Kasimov, Ingrid Minnaert-Janssen, Ilan Englard, Jo Finders, Frank Duray, Robert Kazinczi, Shmoolik Mangan, Amir Sagiv, Andre Engelen
Publikováno v:
SPIE Proceedings.
As the semiconductor industry moves to 3X technology nodes and below, holistic lithography source mask optimization (SMO) methodology targets an increase in the overall litho performance with improved process windows. The typical complexity of both m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6758f2f4587db62fa879768324d63d6
https://doi.org/10.1117/12.848376
https://doi.org/10.1117/12.848376
Autor:
Michael Ben Yishai, Jo Finders, Marcel Demarteau, Ilan Englard, Shmoolik Mangan, Netanel Polonsky, Ziv Parizat, Shay Attal, Frank Duray, Ingrid Minnaert Janssen, Yaron Cohen, Onno Wismans, Yair Elblinger
Publikováno v:
SPIE Proceedings.
Scanner introduction into the fab production environment is a challenging task. An efficient evaluation of scanner performance matrices during factory acceptance test (FAT) and later on during site acceptance test (SAT) is crucial for minimizing the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::343cba2845124f14311f8b77f9d92f21
https://doi.org/10.1117/12.848334
https://doi.org/10.1117/12.848334
Autor:
Netanel Polonsky, Ingrid Minaert Janssen, Marcel Demarteau, Onno Wissmans, Yaron Cohen, Ziv Parizat, Tal Verdene, Yair Elblinger, Shmoolik Mangan, Michael Ben Yishai, Jo Finders, Lev Faivishevsky, Frank Duray, Ilan Englard
Publikováno v:
SPIE Proceedings.
Scanner performance is influenced by the quality of its illumination, mechanical and optical elements and the impact of these factors on the printed wafer. Isolation of the aggregated scanner errors from other sources of error on the printed wafer is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8ab733bb05aeea33265c5893ff5e5d8
https://doi.org/10.1117/12.833467
https://doi.org/10.1117/12.833467
Autor:
Shmoolik Mangan, Jo Finders, Dror Kasimov, Amir Sagiv, Robert Kazinczi, Ingrid Minnaert-Janssen, Frank Duray, Andre Engelen, Ilan Englard
Publikováno v:
SPIE Proceedings.
As the semiconductor industry moved to 4X technology nodes and below, low-k 1 ArF lithography approached the theoretical limits of single patterning resolution, a regime typically plagued by marginally small process windows. In order to widen the pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29f15fc84bdb740d29679850bfd5fb26
https://doi.org/10.1117/12.832724
https://doi.org/10.1117/12.832724
Autor:
Jo Finders, Ingrid Minnaert-Janssen, Rachel Ren, Paul Frank Luehrmann, Ryan Gibson, Craig Hickman, Frank Duray, Robert Kazinczi, Nicole Schoumans, Lior Shoval, Baukje Wisse, Yair Elblinger, Yaron Cohen, Liesbeth Reijnen, Michael Ben-Yishai, Merri L. Carlson, Dan Rost, Ilan Englard, Shmoolik Mangan, Thomas Theeuwes, Michael B. Garrett, Erik Byers
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
The extension of ArF lithography through reduced k1, immersion and double patterning techniques makes lithography a difficult challenge. Currently, the concept of simple linear flow from design to functional photo-mask is being replaced by a more com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09beb6c4e2e408b2fde8044c3d974ad8
https://doi.org/10.1117/12.815415
https://doi.org/10.1117/12.815415
Autor:
Ilan Englard, Michael Ben Yishai, Jo Finders, Robert Kazinczi, Paul Frank Luehrmann, Rich Piech, Lior Shoval, Noam Hillel, Ingrid Minnaert Janssen, Christophe Couderc, Frank Duray, Arno Jan Bleeker
Publikováno v:
SPIE Proceedings.
The tight process window of advanced lithography in the semiconductor industry is further challenged by the growing contribution of photo-mask related CD variations. In previous technology generations, global measurement and global correction were su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0e192a04c63048781eba0cbf831041f
https://doi.org/10.1117/12.793124
https://doi.org/10.1117/12.793124
Autor:
Noam Hillel, Erik van Brederode, Zach Telor, Rich Piech, R. Schreutelkamp, Ilan Englard, Peter Vanoppen, Ted der Kinderen, Erez Ravid, Raf Stegen, Jeroen Linders, Saar Shabtay, Ofer Rotlevi, Amir Wilde, Claudio Masia, Ingrid Minnaert-Janssen, Denis Ovchinnikov, Frank Duray
Publikováno v:
SPIE Proceedings.
Increase of Depth of Focus (DOF) and higher Numerical Aperture (NA), make of immersion lithography a sub-50nm technology node enabler. At the same time it introduces a range of new defect types, also known as immersion defects. According to the ITRS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52832092a4e1f75c5bf30c95a50998e3
https://doi.org/10.1117/12.776085
https://doi.org/10.1117/12.776085
Autor:
Ofer Rotlevi, Ilan Englard, Raf Stegen, Lior Levin, Rich Piech, Eran Valfer, Peter Vanoppen, Shalev Dror, Inge Lamers, R. Schreutelkamp, Mireia Blanco Mantecon, Eitan Binyamini, Gazi Tanriseven, Nurit Raccah, Ted der Kinderen, Frank Duray, Erik van Brederode, Ingrid Minnaert-Janssen
Publikováno v:
SPIE Proceedings.
Immersion lithography offers great benefit for advanced technology nodes but at the same time poses a great challenge. Along with hyper NA values, which increase the scanner resolution, new types of imaging process related defects emerge. These new d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1084952591f461cb89bf86b47e9eeef
https://doi.org/10.1117/12.713466
https://doi.org/10.1117/12.713466
Autor:
Gert-Jan Janssen, Liraz Gershtein, Ingrid Minnaert-Janssen, Ofer Adan, Eelco van Setten, Peter Vanoppen, Ilan Englard, Ram Peltinov, Amit Moran, Frank Duray
Publikováno v:
SPIE Proceedings.
Contact hole integrity is an important metric for IC manufacturers, which is reflected in tight ellipticity control as part of the lithography tool qualifications. The current ellipticity measurement methodology is very sensitive to random process va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a68cd44dfec80c43d85afffa4f98fed
https://doi.org/10.1117/12.713469
https://doi.org/10.1117/12.713469