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pro vyhledávání: '"Frank Cc Huang"'
Autor:
Chan Lon Yang, Yu-Ren Wang, Frank Cc Huang, Michael Chan, Charles Cl Lin, Shao Wei Wang, J.Y. Wu
Publikováno v:
2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP).
High temperature RTO (Rapid Thermal Oxidation) process can get good quality but growth rate was too fast to get a controllable ultra-thin SiO 2 as interfacial layer (IL) for high-K gate dielectrics application. In this paper, we investigated the phys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bcc7b435c69988165a35b2f1e6640d9
https://doi.org/10.1109/rtp.2010.5623796
https://doi.org/10.1109/rtp.2010.5623796
