Zobrazeno 1 - 10
of 109
pro vyhledávání: '"Francoise K. LeGoues"'
Publikováno v:
Microscopy Research and Technique. 42:281-294
The in situ transmission electron microscope allows us to visualise processes occurring at surfaces and interfaces in real time and is therefore capable of providing detailed, quantitative information about reaction mechanisms. We have used a UHV TEM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afaa123a03fc4aa5672607edd792dc75
https://doi.org/10.1002/(sici)1097-0029(19980915)42:4<281::aid-jemt7>3.0.co
https://doi.org/10.1002/(sici)1097-0029(19980915)42:4<281::aid-jemt7>3.0.co
Autor:
Eric A. Stach, Francoise K. LeGoues, Rudolf M. Tromp, Mark C. Reuter, John C. Bean, Matthew Copel, Robert Hull
Publikováno v:
Journal of Applied Physics. 83:1931-1937
We have measured the velocity of misfit dislocation threading segments in real time during ultrahigh vacuum (UHV) chemical vapor deposition heteroepitaxial growth of thin SiGe epilayers on Si (001) using ultrahigh vacuum transmission electron microsc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e643dbe74653a8ddb6e5925a6f25e995
https://doi.org/10.1063/1.366984
https://doi.org/10.1063/1.366984
Autor:
J. O. Chu, Francoise K. LeGoues, Bernard S. Meyerson, L. P. Tilly, F. Cardone, Patricia M. Mooney, Christopher P. D'Emic
Publikováno v:
Journal of Applied Physics. 82:688-695
Two shallow hole traps dominate the deep level transient spectroscopy (DLTS) data for strain-relaxed Si0.7Ge0.3 layers grown on Si(100) by ultrahigh vacuum chemical vapor deposition at temperatures ⩽560 °C. The trap energy levels are at Ev+0.06 an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb5b0fff672a06c8af9b26372b3d6d55
https://doi.org/10.1063/1.365599
https://doi.org/10.1063/1.365599
Autor:
M. A. Lutz, Randall M. Feenstra, J. O. Chu, Patricia M. Mooney, Francoise K. LeGoues, Jean Jordan-Sweet
Publikováno v:
Journal of Applied Physics. 80:89-96
Grazing‐incidence x‐ray diffraction (GIXD) permits the direct measurement of in‐plane lattice parameters of SiGe films that are too thin to yield good results from normal‐geometry triple‐axis techniques. A unique ‘‘X’’‐shaped patt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5340dfcfe72fab406bbfb2480abbe64
https://doi.org/10.1063/1.362776
https://doi.org/10.1063/1.362776
Publikováno v:
Surface Science. 349:129-144
We use ultrahigh vacuum transmission electron microscopy (UHV-TEM) to study the growth of Ge on Si(001) in real time at different temperatures and for coverages ranging from the initial monolayers to the development and relaxation of 3D islands. Duri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b586f0815744b6a373ea996f146a8fef
https://doi.org/10.1016/0039-6028(95)01068-8
https://doi.org/10.1016/0039-6028(95)01068-8
Publikováno v:
Surface Science. 349:249-266
We have used the UHV-TEM to study the growth of Ge on Si(111) in situ, from the deposition of the first monolayer to complete relaxation by the introduction of dislocations. We show that, at 650°C, the growth of Ge islands is dominated by steps on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0b11d6e074dbb129481f77f6de20e96
https://doi.org/10.1016/0039-6028(95)00900-0
https://doi.org/10.1016/0039-6028(95)00900-0
Publikováno v:
Physical Review Letters. 74:2706-2709
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79857fb2c15730c35cb67ba218d0960c
https://doi.org/10.1103/physrevlett.74.2706
https://doi.org/10.1103/physrevlett.74.2706
Publikováno v:
Journal of Applied Physics. 75:7240-7246
The relaxation in Si/SiGe bilayers grown on top of SIMOX wafers has been studied. By judiciously choosing the thickness ratios of the Si and SiGe, it is possible to relax the bilayer through the glide of dislocations exclusively in the Si layer, leav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::122d8160a378662ef77abdaf0e19ea47
https://doi.org/10.1063/1.356682
https://doi.org/10.1063/1.356682
Autor:
Francoise K. LeGoues, Jerry Tersoff
Publikováno v:
Physical Review Letters. 72:3570-3573
We show that strained epitaxial layers can relax by two competing mechanisms. At large misfit, the surface becomes rough, allowing easy nucleation of dislocations. However, strain-induced surface roughening is thermally activated, and the energy barr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75f5c73669f0c402e6f74f6ab712cca5
https://doi.org/10.1103/physrevlett.72.3570
https://doi.org/10.1103/physrevlett.72.3570
Publikováno v:
Journal of Applied Physics. 75:3968-3977
A comprehensive x‐ray‐diffraction study of the variation of the tilt angle between a Si1−xGex layer and the (001) Si substrate is presented. Such measurements provide the basis of a new method for determining the nucleation activation energy of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7096b5b2c8179564ad16ef73c923608d
https://doi.org/10.1063/1.356992
https://doi.org/10.1063/1.356992