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pro vyhledávání: '"Francois P. du Toit"'
Autor:
Francois P. du Toit, Ivan W. Hofsajer
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 5, Pp 1671-1683 (2024)
Wide Bandgap devices are becoming more popular because of their higher switching performance. However, this higher performance comes at the cost of increased susceptibility to parasitic effects and leads to problems such as voltage overshoot and ring
Externí odkaz:
https://doaj.org/article/d1a907b6ae59456683b803f362d35f8c
Autor:
Francois P. Du Toit, Ivan W. Hofsajer
Publikováno v:
IEEE Access, Vol 12, Pp 38646-38663 (2024)
Recent advances in semiconductor technology have paved the way for ultra-fast switching capabilities. This increase in switching speed enhances efficiency, power density, and frequency but also increases overvoltage oscillations at the switching node
Externí odkaz:
https://doaj.org/article/c674441477ff4393a8394dd61ecd0af0