Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Francois Le Henaff"'
Autor:
Francois Le Henaff, Weikun He, Jeffrey Durham, Gustavo Greca, Johan Hamelink, Paul Salerno, Jean Claude Harel
Publikováno v:
2016 IEEE 18th Electronics Packaging Technology Conference (EPTC).
The objective of this work is to evaluate thermal and electrical performance improvements from silver sintering compared to traditional solder attachment in an IGBT + diode / 650V rated TO-247 package. The devices under test (D.U.T) will be stressed
Autor:
Eric Woirgard, Jean-Yves Deletage, Stephane Azzopardi, L. Theolier, Francois Le Henaff, F. Baccar
Publikováno v:
The 26th International Symposium on Power Semiconductor Devices and ICs (ISPSD'14)
The 26th International Symposium on Power Semiconductor Devices and ICs (ISPSD'14), Jun 2014, Waikoloa, United States. pp.143-146, ⟨10.1109/ISPSD.2014.6855996⟩
The 26th International Symposium on Power Semiconductor Devices and ICs (ISPSD'14), Jun 2014, Waikoloa, United States. pp.143-146, ⟨10.1109/ISPSD.2014.6855996⟩
International audience; In this paper, diodes manufactured in 2008, allowing to obtain the first electrical measurements of the Deep Trench Termination (DT2), are analyzed in a reliability purpose. For the first time, assemblies are made using DT2 di
Autor:
Francois Le Henaff, Stephane Azzopardi, Loïc Théolier, Jean-Yves Deletage, Eric Woirgard, Serge Bontemps, Julien Joguet
Publikováno v:
HAL
Integrity of the power module is mainly provided by interconnections between the different components. Due to RoHS restrictions, conventional lead-based solders cannot be used anymore. New solutions of die-attach have been investigated such as transi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::618b530ad0c1619319689c34b3458ac8
https://hal.archives-ouvertes.fr/hal-01065293
https://hal.archives-ouvertes.fr/hal-01065293
Autor:
Fédia Baccar, Loïc Théolier, Stephane Azzopardi, Francois Le Henaff, Jean-Yves Deletage, Eric Woirgard
Publikováno v:
HAL
SYMPOSIUM DE GÉNIE ELECTRIQUE (SGE'14)
SYMPOSIUM DE GÉNIE ELECTRIQUE (SGE'14), Jul 2014, Cachan, France. pp.1-7
SYMPOSIUM DE GÉNIE ELECTRIQUE (SGE'14)
SYMPOSIUM DE GÉNIE ELECTRIQUE (SGE'14), Jul 2014, Cachan, France. pp.1-7
Actuellement, les composants à semi-conducteur de puissance sont basés sur des structures volumineuses pour tenir la tension. Dans ce contexte, une nouvelle terminaison (Deep Trench termination - DT2) basée sur une tranchée remplie de BenzoCycloB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::82e51b8bb84f8c5d760b3cdd48171814
https://hal.archives-ouvertes.fr/hal-01017558
https://hal.archives-ouvertes.fr/hal-01017558
Autor:
Jean-Yves Deletage, S. Bontemps, Eric Woirgard, Amandine Masson, Julien Joguet, Francois Le Henaff, Stephane Azzopardi
Publikováno v:
2013 15th European Conference on Power Electronics and Applications (EPE).
Due to RoHS restrictions, researches on lead-free packaging have increased over the past decade. Low Temperature Joining Techniques (such as silver sintering or Ni-Au Transient Liquid Phase Bonding) are particularly studied because they are processed