Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Francois Jacquet"'
Autor:
Philippe Bongrand, Clémence Cardon-Quint, Olivier Coutarel, François Jacquet-Francillon, Jean-Yves Langaney, Hélène Buisson-Fenet, Olivier Rey
Education is an important matter in contemporary societies, as it is highlighted by the central position of educational topics in political platforms or by the many debates about educational issues. In the meantime, one often regrets that educational
Publikováno v:
physica status solidi (a). 205:1373-1377
As the minimum dimensions of complementary metal oxide semiconductor (CMOS) transistors shrink down to 90 nm and below, some physical obstacles have been observed which prevent rigidly this miniaturization. For example, high transistor leakage curren
Autor:
Alexandre Villaret, Pierre Malinge, Sorin Cristoloveanu, Pascal Masson, Thomas Skotnicki, Philippe Candelier, R. Ranica, Francois Jacquet, Pascale Mazoyer
Publikováno v:
Microelectronic Engineering. 72:434-439
We report on the modeling and characterization of the memory effect observed on triple-well nMOSFETs. First, the mechanisms of charge injection, localization and retention in the floating p-well of triple-well nMOSFETs are investigated and a new mode
Autor:
Benoit Ganne, Patrice Couvert, Renaud Ayrignac, Benoît Dupont de Dinechin, Samuel Jones, Frederic Riss, Thierry Strudel, Nicolas Morey Chaisemartin, Francois Jacquet, Pierre Guironnet de Massas, Pierre-Edouard Beaucamps
Publikováno v:
HPEC
The Kalray MPPA-256 processor integrates 256 user cores and 32 system cores on a chip with 28nm CMOS technology. Each core implements a 32-bit 5-issue VLIW architecture. These cores are distributed across 16 compute clusters of 16+1 cores, and 4 quad
Autor:
Francois Jacquet-Francillon
Publikováno v:
Le Télémaque. 50:35
Autor:
Francois Jacquet-Francillon
Publikováno v:
Le Télémaque. 47:39
Autor:
J.P. Schoellkopf, Thomas Skotnicki, Richard Fournel, Pascale Mazoyer, R. Bouchakour, Pierre Malinge, Francois Jacquet, G. Gasiot, Pascal Masson, Alexandre Villaret, R. Ranica, P. Roche, Philippe Candelier
Publikováno v:
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
A one transistor DRAM cell realized on bulk substrate (lT-Bulk) with CMOS 90nm platform is presented for the first time. The device fabrication is fully compatible with logic process integration and includes only few additional steps, thus making thi
Autor:
Philippe Candelier, R. Ranica, B. Allard, Pierre Malinge, Richard Fournel, Alexandre Villaret, Francois Jacquet, S. Martin, Pascale Mazoyer
Publikováno v:
Digest of Technical Papers. 2005 Symposium on VLSI Circuits, 2005..
An 8 Mbit memory chip featuring a floating body one transistor cell on bulk substrate is characterized for the first time. A high-speed and high accuracy current sense-amplifier with a large common mode reference current is proposed. It achieves a re
Publikováno v:
2004 IEEE International Reliability Physics Symposium. Proceedings.
Terrestrial radiations, such as neutrons or alpha, create charges which, when collected by sensitive memory nodes, can destroy its stored information. Such a failure is called a soft error since only the data is destroyed while the circuit itself is