Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Francois Doniat"'
Autor:
Curtis Anderson, Beverly Wright, Francois Doniat, Robert L. Opila, Dan Yang, James McAndrew, Christian Dussarrat
Publikováno v:
Microelectronic Engineering. 92:34-37
The effect of the ligand structure in carbosilane chains with formula R^1R^2R^3-Si-C"xH"2"x-Si-R^4R^5R^6 with x=1, 2 and R=H, Me, OEt is studied. The thermal characterization of the molecules as well as film characteristics is presented. It has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c75c3028ce71f84e5d1f3887024def35
https://doi.org/10.1016/j.mee.2011.05.040
https://doi.org/10.1016/j.mee.2011.05.040
Autor:
Eric Eisenbraun, Vincent M. Omarjee, Nathan Stafford, Francois Doniat, Justin C. Long, Adam J. Gildea, Christian Dussarrat
Publikováno v:
2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
CF 3 I, a low greenhouse warming potential gas, has been used for low-k etching using an ICP reactor. Key parameters such as reactor pressure, bias power, ICP power and total gas flow rate were investigated to develop an optimized etch process. A com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b832eaa16fd39ed7b6bf49dede8c93af
https://doi.org/10.1109/asmc.2011.5898178
https://doi.org/10.1109/asmc.2011.5898178
Publikováno v:
Journal of The Electrochemical Society. 156:H555
Cu electrochemical mechanical planarization (ECMP) has been investigated as an alternative technology to Cu chemical mechanical planarization (CMP). The influence of pH and a complexing agent on the surface quality and Cu removal rate during ECMP is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59a37ee21278252b7232a6e0564e64dc
https://doi.org/10.1149/1.3125703
https://doi.org/10.1149/1.3125703
Autor:
Abhinav Tripathi, Alex Barajas, Francois Doniat, James McAndrew, Ian Ivar Suni, Craig D. Burkhard, Yuzhuo Li
Publikováno v:
Journal of The Electrochemical Society. 155:H918
Cu electrochemical mechanical planarization (ECMP) is currently being investigated to replace or supplement Cu chemical mechanical planarization (CMP) due to the introduction of porous low-k dielectric materials, which may not withstand the mechanica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc40b68139f9ed67f755df0d1facefc9
https://doi.org/10.1149/1.2980439
https://doi.org/10.1149/1.2980439
Autor:
Ian I. Suni, Abhinav Tripathi, Craig Burkhard, Yuzhuo Li, Alex Barajas, Francois Doniat, James McAndrew
Publikováno v:
ECS Meeting Abstracts. :844-844
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d806bc7f1bece3ef3725d0523f7b761
https://doi.org/10.1149/ma2007-01/18/844
https://doi.org/10.1149/ma2007-01/18/844