Zobrazeno 1 - 10
of 292
pro vyhledávání: '"Franco Cerrina"'
Autor:
Karl E. Hauschild, Naveeda Qadir, Franco Cerrina, Christopher L. Warren, Clayton D. Carlson, Youngsook Lee, Aseem Z. Ansari, Devesh Bhimsaria, Mary Szatkowski Ozers
Publikováno v:
Proceedings of the National Academy of Sciences. 107:4544-4549
Evaluating the specificity spectra of DNA binding molecules is a nontrivial challenge that hinders the ability to decipher gene regulatory networks or engineer molecules that act on genomes. Here we compare the DNA sequence specificities for differen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd679b11995a851168a5a099b7f26868
https://doi.org/10.1073/pnas.0914023107
https://doi.org/10.1073/pnas.0914023107
Publikováno v:
ECS Transactions. 19:45-50
A simulation procedure is presented for modeling power generation of p-n junction-based betavoltaic devices. The procedure consists of two parts, simulation of electron-hole pair generation and simulation of device power output. The generation rate i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9654d7702a313969cf9a3daa362cbb6f
https://doi.org/10.1149/1.3247990
https://doi.org/10.1149/1.3247990
Autor:
Artak Isoyan, Q. Leonard, K. Heinrich, Franco Cerrina, J. Wallace, Paul F. Nealey, A. Ho, Mikhail Yu. Efremov, Yang-Chun Cheng, F. Jiang
Publikováno v:
Synchrotron Radiation News. 21:12-24
The semiconductor industry continues in its relentless march to miniaturization [1]. Every four years or so, the dimensions of the features on an integrated circuit are halved, yielding an increase in density and functionality of the electronic “ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fa6dad755fa575c516d3be198c46955
https://doi.org/10.1080/08940880802268236
https://doi.org/10.1080/08940880802268236
Autor:
Franco Cerrina, Omar D. Negrete
Publikováno v:
Microelectronic Engineering. 85:834-837
A maskless photolithography test bed was constructed to examine the requirements for stepper-based synthesis of Ultra Large Scale DNA chips (ULS-DNA chips). The test bed is based on a microscope optical layout with a 5iÂ?reduction imaging lens and m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c2ccaf7c63f6dd851df7415f7d2fe1a
https://doi.org/10.1016/j.mee.2008.01.014
https://doi.org/10.1016/j.mee.2008.01.014
Autor:
Franco Cerrina, Artak Isoyan, M. A. Green, Paul F. Nealey, John C. Wallace, Q. Leonard, Yang-Chun Cheng, Mike V. Fisher, Joseph Bisognano
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 582:254-257
The soft X-ray region around 13 nm (Extreme Ultra Violet, EUV) has become very important for applications to nanopatterning. Typically, high-resolution patterning of less than 50 nm pitch lines and spaces requires optical systems that are complex and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e311b8a300a7bb117ac2843aa5d5ebd
https://doi.org/10.1016/j.nima.2007.08.124
https://doi.org/10.1016/j.nima.2007.08.124
Autor:
K. Heinrich, Michael R. Sussman, Matthew J. Rodesch, Mo-Huang Li, Changhan Kim, Kathryn E. Richmond, J. Kaysen, Franco Cerrina, S. Blair, Peter J. Belshaw, L. Chu, Brock F. Binkowski
Publikováno v:
Microelectronic Engineering. 83:1613-1616
We report the progress on 765bp full green fluorescent protein (GFP) gene assembly of oligonucleotides from a single DNA microarray, using the amplification and assembly of chip-eluted DNA (AACED) strategy. The chip was fabricated with maskless array
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::315f882f9bd4e45e2279dec1c3e37a0b
https://doi.org/10.1016/j.mee.2006.01.143
https://doi.org/10.1016/j.mee.2006.01.143
Autor:
Paul F. Nealey, Franco Cerrina, John C. Wallace, M. Thiyagarajan, J. H. Choi, Nikola Batina, Kenneth E. Gonsalves, Paul Zimmerman, Victoria Golovkina
Publikováno v:
Microelectronic Engineering. 77:27-35
As the semiconductor industry moves to the 32 nm node, it becomes apparent that new lithography technology will be needed. One possibility for fabricating this feature size is extreme ultraviolet (EUV) technology. With the advent of EUV, new high per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccee130c2412ecfb03acae0a66a16c65
https://doi.org/10.1016/j.mee.2004.08.003
https://doi.org/10.1016/j.mee.2004.08.003
Autor:
Franco Cerrina, Jens Gobrecht, Harun H. Solak, Christian David, Victoria Golovkina, Paul F. Nealey, Sang Ouk Kim
Publikováno v:
Microelectronic Engineering. :56-62
We have used transmission diffraction gratings in an interferometric setup to pattern one-and two-dimensional periodic patterns with periods near 50 nm. The diffraction gratings were written with e-beam lithography. The exposures were made at 13.4 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9317579dc57cff9858622bfeffb95c4d
https://doi.org/10.1016/s0167-9317(03)00059-5
https://doi.org/10.1016/s0167-9317(03)00059-5
Publikováno v:
Microelectronic Engineering. 65:454-462
A novel nanocomposite photoresist was synthesized for extreme ultraviolet lithography (EUVL) by a radical polymerization process. This resist system exhibited enhanced sensitivity and contrast for EUVL. The potential for EUVL nanofeatures is also exa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2a6fe64ceb58af9e08d34f7e8a2cf61
https://doi.org/10.1016/s0167-9317(03)00164-3
https://doi.org/10.1016/s0167-9317(03)00164-3
Publikováno v:
Microelectronic Engineering. :77-82
We have developed a multiple beam Extreme Ultraviolet (EUV) interference lithography system to create two-dimensional periodic structures. A spatially coherent EUV beam from an undulator source is diffracted by several transmission gratings, which we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::468420739f48d73252b55077e6dd874b
https://doi.org/10.1016/s0167-9317(02)00579-8
https://doi.org/10.1016/s0167-9317(02)00579-8