IR Thermography for Temperature Measurements and Fault Location on AlGaN/GaN HEMTs and MMICs

Autor: Jean-Claude Jacquet, Jean-Claude Clement, Laurent Brunel, Benoit Lambert, Christophe Gaquiere, Lény Baczkowski, Dominique Carisetti, N. Sarazin, Franck Vouzelaud

Publikováno v: International Symposium for Testing and Failure Analysis.

This paper shows a specific approach based on infrared (IR) thermography to face the challenging aspects of thermal measurement, mapping, and failure analysis on AlGaN/GaN high electron-mobility transistors (HEMTs) and MMICs. In the first part of thi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2b2ddbbb8d049f0eddfe8176d9ad59ba
https://doi.org/10.31399/asm.cp.istfa2015p0253

Thermal characterization using optical methods of AlGaN/GaN HEMTs on SiC substrate in RF operating conditions

Autor: Olivier Jardel, Dominique Carisetti, Chistophe Gaquiere, Laurent Brunel, Yves Mancuso, Lény Baczkowski, Franck Vouzelaud, Myriam Moreau, Jean-Claude Jacquet

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2015, 62, pp.3992-3998. ⟨10.1109/TED.2015.2493204⟩
IEEE Transactions on Electron Devices, 2015, 62, pp.3992-3998. ⟨10.1109/TED.2015.2493204⟩

Performance and reliability of wide bandgap high-power amplifiers are correlated with their thermal behavior. Thermal model development and suitable temperature measurement systems are necessary to quantify the channel temperature of devices in real

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81be6893a21ab7ce20266de13a4fab9b
https://hal.archives-ouvertes.fr/hal-01348823