Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Franck Omnes"'
Autor:
Franck Omnes
Publikováno v:
Optoelectronic Sensors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d46dec15a568018c4ff3b2766efafb5
https://doi.org/10.1002/9780470611630.ch1
https://doi.org/10.1002/9780470611630.ch1
Publikováno v:
Semiconductor Science and Technology. 6:103-107
The authors report the fabrication of n-type GaInP/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional gas field-effect transistors grown by low-pressure metallorganic chemical vapour deposition on GaAs semi-insulating substrates.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa759b544f7a131356a2f7389d493b48
https://doi.org/10.1088/0268-1242/6/2/006
https://doi.org/10.1088/0268-1242/6/2/006
Publikováno v:
Journal of Applied Physics. 69:1389-1398
Using reflectance anisotropy (RA), we investigated in situ the metalorganic chemical‐vapor deposition of a number of III‐V heterojunctions. Each type of heterojunction exhibits a characteristic RA record as a function of time, depending on the fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cb70d2933164e26aae3aec07e8b325f
https://doi.org/10.1063/1.347278
https://doi.org/10.1063/1.347278
Autor:
Bernard Drevillon, Franck Omnes, M. Defour, Manijeh Razeghi, Stephanie M. Koch, Olivier Acher
Publikováno v:
Journal of Applied Physics. 68:3564-3577
The growth of InAs on InP and InP on GaAs is investigated using reflectance anisotropy (RA) measurements. Very large optical anisotropies are observed, related to the three‐dimensional growth mode of these materials. A model is proposed to account
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28d050d5b6eeb4fb438abce0ff317156
https://doi.org/10.1063/1.346316
https://doi.org/10.1063/1.346316
Autor:
Franck Omnes, M. Defour, Olivier Acher, Stephanie M. Koch, Manijeh Razeghi, Bernard Drevillon
Publikováno v:
Journal of Applied Physics. 68:3364-3369
Using reflectance anisotropy, we have investigated InAs metalorganic chemical vapor deposition under optimal growth conditions. The measured optical anisotropy of the growing surface is significantly different from that of the nongrowing, AsH3‐stab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e26d326dceee2feb25290f9a0717448f
https://doi.org/10.1063/1.346365
https://doi.org/10.1063/1.346365
Autor:
Dimitris Pavlidis, Y J Chan, P. Maurel, Manijeh Razeghi, Philippe Bove, M. Defour, Franck Omnes
Publikováno v:
Semiconductor Science and Technology. 5:274-277
The authors report the first fabrication of Ga0.49In0.51P/GaxIn1-xAs n- and p-type lattice matched (x=1) and strained (x-0.85) heterostructure insulated gate field effect transistor (HIGFET) grown by low-pressure metal-organic chemical vapour deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96fcfcc49bc15e1d13f37343160809d1
https://doi.org/10.1088/0268-1242/5/3/016
https://doi.org/10.1088/0268-1242/5/3/016
Publikováno v:
Superlattices and Microstructures. 8:245-248
We report electrical properties of the two dimensional electron gas in selectively S- and Si-doped GaInP/GaAs heterostructures grown by Low Pressure MOCVD. The influence of the spacer thickness on the sheet carrier density derived from Shubnikov-de H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64e28d04bba7e3f92e0179e3c549c0a2
https://doi.org/10.1016/0749-6036(90)90101-c
https://doi.org/10.1016/0749-6036(90)90101-c
Autor:
Franck Omnes, Manijeh Razeghi
Publikováno v:
Applied Physics Letters. 59:1034-1036
Recent experimental results on the photoluminescence and photoluminescence excitation of GaAs‐Ga0.51In0.49P lattice‐matched quantum wells and superlattices are discussed. The full width at half maximum of a 10‐period GaAs‐GaInP superlattice w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04b4f51c0cda21dafa92b8a6e34e80a5
https://doi.org/10.1063/1.106336
https://doi.org/10.1063/1.106336
Publikováno v:
Applied Physics Letters. 59:941-943
Nonintentionally doped metalorganic vapor‐phase epitaxy Ga1−x InxP layers, having an alloy composition (x = 0.49) corresponding to a lattice matched to GaAs, grown by metalorganic chemical vapor deposition, have been studied by capacitance‐volt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78bbf29a86df312f1d5656378a982309
https://doi.org/10.1063/1.106308
https://doi.org/10.1063/1.106308