Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Franck Jauzion-Graverolle"'
Publikováno v:
SPIE Proceedings.
By assessment of options for the fabrication of small contact holes in DRAM devices the method of focus drilling was identified and investigated to overcome the depth of focus limitations. By use of ArF-dry lithography a practical shrink of the targe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6941adbc4a8c28c121d0b3c048d7c0e
https://doi.org/10.1117/12.798807
https://doi.org/10.1117/12.798807
Autor:
Nicolo Morgana, Roderick Koehle, Ralph Schlief, Mario Hennig, Christoph Noelscher, Ralf Neubauer, Thomas Henkel, Molela Moukara, Franck Jauzion-Graverolle
Publikováno v:
Optical Microlithography XXI.
To avoid expensive immersion lithography and to further use existing dry tools for critical contact layer lithography at 4Xnm DRAM nodes the application of altPSM is investigated and compared to attPSM. Simulations and experiments with several test m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6bb1528db260cd53a8da9727a2d42b9
https://doi.org/10.1117/12.772806
https://doi.org/10.1117/12.772806
Autor:
Christoph Noelscher, Marcel Heller, Bee-Kim Hong, Matthias Markert, Ulrich Egger, Franck Jauzion-Graverolle, Dietmar Temmler
Publikováno v:
Optical Microlithography XXI.
Double patterning based on litho-etch-litho-etch techniques requires the fabrication of small lines or of small spaces after first patterning. If spacer techniques are used for pitch fragmentation small lines are needed as carrier in dense arrays. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e59401a3ae90cc94133e3f24c4af205
https://doi.org/10.1117/12.772750
https://doi.org/10.1117/12.772750
Autor:
Gilad Ben-Nahumb, Stefano Ventola, Franck Jauzion-Graverolle, Robert Wildfeuer, Stefan Fuchs, Uwe Kramer, Ovadya Menadeva, David Jackisch
Publikováno v:
SPIE Proceedings.
As design rules shrink, there is an increase in the complexity. OPC/RET have been facilitating unprecedented yield at k 1 factors, they increase the mask complexity and production cost, and can introduce yield-detracting errors. Currently OPC modelin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7754f2aa9c59e3728a5323780ab571e
https://doi.org/10.1117/12.774114
https://doi.org/10.1117/12.774114
Autor:
Christoph Noelscher, Marcel Heller, Matthias Markert, Dietmar Temmler, Franck Jauzion-Graverolle, Nicolo´ Morgana, Ulrich Scheler, Bee-Kim Hong, Ulrich Egger, Vadim Timoshkov, Mirko Vogt
Publikováno v:
Journal of Micro/Nanolithography, MEMS & MOEMS; Jan2009, Vol. 8 Issue 1, p011005-011005-15, 1p