Výsledky vyhledávání - "Franck Bassani"

Akademický článek

Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors

Autor: Pedro Fernandes Paes Pinto Rocha, Mohammed Zeghouane, Sarah Boubenia, Franck Bassani, Laura Vauche, Eugénie Martinez, William Vandendaele, Marc Veillerot, Bassem Salem

Publikováno v: Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024)

Abstract Electrical and material properties of plasma‐enhanced atomic layer deposited (PE‐ALD) AlON on dry‐etched n‐type GaN substrates are investigated for nitrogen concentration ranging from 1.5% to 7.1%. Firstly, an increase in flat‐band

Externí odkaz: https://doaj.org/article/157d1d245c404fd39733d1877f0c92da

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Akademický článek

Synthesis of AlOxNy thin films using a two-step PE-ALD process

Autor: Mohammed Zeghouane, Pedro Fernandes Paes Pinto Rocha, Sarah Boubenia, Franck Bassani, Gauthier Lefevre, Sebastien Labau, Laura Vauche, Eugénie Martinez, Marc Veillerot, Bassem Salem

Publikováno v: AIP Advances, Vol 13, Iss 8, Pp 085128-085128-8 (2023)

Homogeneous AlOxNy thin films with a controlled nitrogen composition, up to 7.1%, were grown on GaN substrate using plasma-enhanced atomic layer deposition. This was achieved through repeated cycles consisting of AlN thin layers deposition and subseq

Externí odkaz: https://doaj.org/article/f45f5de4819e41a7ae8a0c4538f4dc0f

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Akademický článek

200 mm-scale growth of 2D layered GaSe with preferential orientation

Autor: Mickaël Martin, Pascal Pochet, Hanako Okuno, Carlos Alvarez, Edith Bellet-Amalric, Pauline Hauchecorne, Théo Levert, Bernard Pelissier, Łukasz Borowik, Franck Bassani, Sylvain David, Jeremy Moeyaert, Thierry Baron

Publikováno v: APL Materials, Vol 10, Iss 5, Pp 051106-051106-10 (2022)

In this article, we present a fab-compatible metal–organic chemical vapor deposition growth process, realized in a hydrogen ambience, of two-dimensional (2D) layered GaSe on 200 mm diameter Si(111) wafers. Atomic scale characterization reveals init

Externí odkaz: https://doaj.org/article/8b6fa63c2037489a90ae058579706c47

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Akademický článek

AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth

Autor: Claire Besancon, Delphine Néel, Dalila Make, Joan Manel Ramírez, Giancarlo Cerulo, Nicolas Vaissiere, David Bitauld, Frédéric Pommereau, Frank Fournel, Cécilia Dupré, Hussein Mehdi, Franck Bassani, Jean Decobert

Publikováno v: Applied Sciences, Vol 12, Iss 1, p 263 (2021)

The tremendous demand for low-cost, low-consumption and high-capacity optical transmitters in data centers challenges the current InP-photonics platform. The use of silicon (Si) photonics platform to fabricate photonic integrated circuits (PICs) is a

Externí odkaz: https://doaj.org/article/9735c93320c343ec8baffdde11dd8ebc

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AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth

Publikováno v: Applied Sciences, Vol 12, Iss 263, p 263 (2022)
Applied Sciences
Applied Sciences, 2022, 12 (1), pp.263. ⟨10.3390/app12010263⟩

International audience; The tremendous demand for low-cost, low-consumption and high-capacity optical transmitters in data centers challenges the current InP-photonics platform. The use of silicon (Si) photonics platform to fabricate photonic integra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd8f8325e63047b0280727e9db90002d
https://www.mdpi.com/2076-3417/12/1/263

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AlGaInAs Multi-Quantum Well Laser Array on Silicon Achieved by InP-Seed-Bonding and MOVPE Selective Area Growth

Autor: Claire Besancon, Nicolas Vaissiere, Delphine Neel, Hussein Mehdi, Gauthier Lefevre, Viviane Muffato, Loic Sanchez, Frank Fournel, Cecilia Dupre, Franck Bassani, Jean Decobert

Publikováno v: 2022 Compound Semiconductor Week (CSW).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ae49847e0d58cddcdabff4c709bfb6d5
https://doi.org/10.1109/csw55288.2022.9930433

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Smooth plasma etching of GeSn nanowires for gate-all-around field effect transistors

Autor: E. Eustache, Bassem Salem, M. A. Mahjoub, Youssouf Guerfi, Jean-Michel Hartmann, J. Aubin, S. David, Sébastien Labau, Franck Bassani

Publikováno v: Semiconductor Science and Technology
Semiconductor Science and Technology, 2021, 36 (6), pp.065018. ⟨10.1088/1361-6641/abfbb5⟩
Semiconductor Science and Technology, IOP Publishing, 2021, 36 (6), pp.065018. ⟨10.1088/1361-6641/abfbb5⟩

We report on the nanopatterning of horizontal and vertical germanium-tin (Ge1−x Sn x or GeSn) nanowires by inductively coupled plasma reactive ion etching for gate-all-around field effect transistors. First, a chlorine based chemistry has been inve

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb3ebed34affc89a69b505b22612ed08
https://hal.science/hal-03375044

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Procédé de gravure à l’échelle nanométrique d’un alliage germanium étain (GeSn) pour transistor FET

Autor: Eustache, E., Salem, B., Mahjoub, A., Franck BASSANI, Hartmann, J. M.

Publikováno v: United States, Patent n° : Patent EP21153243, US202117156326. 2021
HAL

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::7d580bfe9c7dccb79bc8e25bb72f0986
https://hal.univ-grenoble-alpes.fr/hal-03780200

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Enhancing the incorporation of Sn in vapor–liquid–solid GeSn nanowires by modulation of the droplet composition

Autor: Mohammed Zeghouane, Hadi Hijazi, Franck Bassani, Gauthier Lefevre, Eugenie Martinez, Thierry Luciani, Pascal Gentile, Vladimir G Dubrovskii, Bassem Salem

Publikováno v: Nanotechnology
Nanotechnology, 2022, 33 (24), pp.245605. ⟨10.1088/1361-6528/ac5c12⟩

We report on the influence of the liquid droplet composition on the Sn incorporation in GeSn nanowires (NWs) grown by the vapor−liquid−solid (VLS) mechanism with different catalysts. The variation of the NW growth rate and morphology with the gro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4a95e3db4870838d66dd46f1c25c461
https://doi.org/10.1088/1361-6528/ac5c12

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Morphology Transition of ZnO from Thin Film to Nanowires on Silicon and its Correlated Enhanced Zinc Polarity Uniformity and Piezoelectric Responses

Autor: Hervé Roussel, Carmen Jiménez, Youssouf Guerfi, Eirini Sarigiannidou, Franck Bassani, Fabrice Donatini, X. Mescot, Vincent Consonni, Bassem Salem, Quang Chieu Bui, Gustavo Ardila, Odette Chaix-Pluchery

Publikováno v: ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces, 2020, 12 (26), pp.29583-29593. ⟨10.1021/acsami.0c04112⟩
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2020, ⟨10.1021/acsami.0c04112⟩
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2020, 12 (26), pp.29583-29593. ⟨10.1021/acsami.0c04112⟩

ZnO thin films and nanostructures have received increasing interest in the field of piezoelectricity over the last decade, but their formation mechanisms on silicon when using pulsed-liquid injection metal–organic chemical vapor deposition (PLI-MOC

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b441c970b7d5d66e1acc9a48e951f6e
https://hal.univ-grenoble-alpes.fr/hal-02917568

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